FQI10N20, FQI10N20C, FQI10N20L Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO D/C:TO
FQI10N20, FQI10N20C, FQI10N20L Datasheet download
Part Number: FQI10N20
MFG: FAIRCHILD
Package Cooled: TO
D/C: TO
MFG:FAIRCHILD Package Cooled:TO D/C:TO
FQI10N20, FQI10N20C, FQI10N20L Datasheet download
MFG: FAIRCHILD
Package Cooled: TO
D/C: TO
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PDF/DataSheet Download
Datasheet: FQI10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: FQI10N20C
File Size: 623428 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQI10N20L
File Size: 587826 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
Symbol |
Parameter |
FQB10N20C/FQI10N20C |
Units | |
VDSS |
Drain-Source Voltage |
200 |
V | |
ID |
Drain Current |
- Continuous (TC =25°C) |
9.5 |
A |
- Continuous (TC = 100°C) |
6.0 |
A | ||
IDM |
DrainCurrentPulsed (Note 1) |
38 |
A | |
VGSS |
Gate-Source Voltage |
± 30 |
V | |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
210 |
mJ | |
IAR |
Avalanche Current (Note 1) |
9.5 |
A | |
EAR |
Repetitive Avalanche Energy (Note 1) |
7.2 |
mJ | |
d v/dt |
PeakDiode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
PD TJ, TSTG |
Power Dissipation (TC = 25°C) |
72 |
W | |
- Derate above 25°C |
0.57 |
W/°C | ||
Operating and |
-55 to +150 |
°C | ||
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters,
Symbol |
Parameter |
FQB10N20L / FQI10N20L |
Units | |
VDSS |
Drain-Source Voltage |
200 |
V | |
ID |
Drain Current |
- Continuous (TC =25°C) |
10 |
A |
- Continuous (TC = 100°C) |
6.3 |
A | ||
IDM |
Drain Current Pulsed (Note 1) |
40 |
A | |
VGSS |
Gate-Source Voltage |
±20 |
V | |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
180 |
mJ | |
IAR |
Avalanche Current (Note 1) |
10 |
A | |
EAR |
Repetitive Avalanche Energy (Note 1) |
8.7 |
mJ | |
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
PD |
Power Dissipation (TA = 25°C) |
3.13 |
W | |
Power Dissipation (TC = 25°C) |
87 |
W | ||
- Derate above 25°C |
0.7 |
W/°C | ||
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |