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FQI10N60C, FQI11N40, FQI11N40C

Table of contents:
Info of FQI10N60C
Info of FQI11N40
Info of FQI11N40C

FQI10N60C, FQI11N40, FQI11N40C Selling Leads, Datasheet

Package Cooled:TO-262 D/C:09+

FQI10N60C, FQI11N40, FQI11N40C Datasheet download

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Part Number: FQI10N60C

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Package Cooled: TO-262

D/C: 09+

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FQI10N60C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FQI10N60C Maximum Ratings

Symbol	Parameter	FQB10N60C / FQI10N60C	Units
VDSS	Drain-Source Voltage	600	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	9.5	A
ID		3.3	A
IDM	Drain Current - Pulsed (Note 1)	38	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	700	mJ
IAR	Avalanche Current (Note 1)	9.5	A
EAR	Repetitive Avalanche Energy (Note 1)	15.6	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
PD	Power Dissipation (TA = 25°C) *	3.13	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	156	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	1.25	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQI10N60C Features

• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQI11N40 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.

FQI11N40 Maximum Ratings

Symbol	Parameter	FQB11N40 / FQI11N40	Units
VDSS	Drain-Source Voltage	400	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	11.4	A
ID		7.2	A
IDM	Drain Current - Pulsed (Note 1)	46	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	520	mJ
IAR	Avalanche Current (Note 1)	11.4	A
EAR	Repetitive Avalanche Energy (Note 1)	14.7	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
PD	Power Dissipation (TA = 25°C) *	3.13	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	147	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	1.18	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQI11N40 Features

• 11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQI11N40C General Description

FQI11N40C Maximum Ratings

Symbol	Parameter	FQB11N40C / FQI11N40C	Units
VDSS	Drain-Source Voltage	400	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	10.5	A
ID		6.6	A
IDM	Drain Current - Pulsed (Note 1)	42	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	360	mJ
IAR	Avalanche Current (Note 1)	11	A
EAR	Repetitive Avalanche Energy (Note 1)	13.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
PD	Power Dissipation (TA = 25°C) *	4.5	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	135	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	1.07	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQI11N40C Features

• 10.5 A, 400V, RDS(on) = 0.5 Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 85pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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