FQI13N10, FQI13N10L, FQI13N50 Selling Leads, Datasheet
Package Cooled:TO-262 D/C:TO
FQI13N10, FQI13N10L, FQI13N50 Datasheet download
Part Number: FQI13N10
MFG: --
Package Cooled: TO-262
D/C: TO
FQI13N10, FQI13N10L, FQI13N50
- Table of contents:
Info of FQI13N10
Info of FQI13N10L
Info of FQI13N50
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About FQI13N10
PDF/DataSheet Download
Datasheet: FQI13N10
File Size: 643929 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI13N10L
PDF/DataSheet Download
Datasheet: FQI13N10L
File Size: 578444 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI13N50
PDF/DataSheet Download
Datasheet: FQI13N50
File Size: 639291 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI13N10 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the av alanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
FQI13N10 Maximum Ratings
| Symbol | Parameter |
FQB13N10 / FQI13N10 |
Units |
| VDSS | Drain-Source Voltage |
100 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
12.8 |
A |
|
9.05 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
51.2 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
95 |
mJ |
| IAR | Avalanche Current (Note 1) |
12.8 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
6.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
65 |
W | |
|
0.43 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI13N10 Features
• 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
FQI13N10L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.
FQI13N10L Maximum Ratings
| Symbol | Parameter |
FQB13N10L / FQI13N10L |
Units |
| VDSS | Drain-Source Voltage |
100 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
12.8 |
A |
|
9.05 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
51.2 |
A |
| VGSS | Gate-Source Voltage |
± 20 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
95 |
mJ |
| IAR | Avalanche Current (Note 1) |
12.8 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
6.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
65 |
W | |
|
0.43 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI13N10L Features
• 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V
• Low gate charge ( typical 8.7 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 8.7 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
FQI13N50 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, and electronic lamp ballast based on half bridge.
FQI13N50 Maximum Ratings
| Symbol | Parameter |
FQB13N50 / FQI13N50 |
Units |
| VDSS | Drain-Source Voltage |
500 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
12.5 |
A |
|
7.9 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
50 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
810 |
mJ |
| IAR | Avalanche Current (Note 1) |
12.5 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
17 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
170 |
W | |
|
1.35 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI13N50 Features
• 12.5A, 500V. RDS(on) = 0.43Ω @VGS = 10 V
• Low gate charge ( typical 45 nC).
• Low Crss ( typical 25 pF).
• Fast switching.
• 100% avalanche tested.
• Improved dv/dt capability.
• Low gate charge ( typical 45 nC).
• Low Crss ( typical 25 pF).
• Fast switching.
• 100% avalanche tested.
• Improved dv/dt capability.
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