FQI14N30, FQI15P12, FQI16N15 Selling Leads, Datasheet
MFG:FSC Package Cooled:TO D/C:TO
FQI14N30, FQI15P12, FQI16N15 Datasheet download
Part Number: FQI14N30
MFG: FSC
Package Cooled: TO
D/C: TO
FQI14N30, FQI15P12, FQI16N15
- Table of contents:
Info of FQI14N30
Info of FQI15P12
Info of FQI16N15
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About FQI14N30
PDF/DataSheet Download
Datasheet: FQI14N30
File Size: 762451 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI15P12
PDF/DataSheet Download
Datasheet: FQI15P12
File Size: 667962 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI16N15
PDF/DataSheet Download
Datasheet: FQI16N15
File Size: 766620 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI15P12 General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
FQI15P12 Maximum Ratings
|
Symbol |
Parameter |
FQB15P12 / FQI15P12 |
Units | |
|
VDSS |
Drain-Source Voltage |
-120 |
V | |
|
ID |
Drain Current |
- Continuous (TC =25°C) |
-15 |
A |
|
- Continuous (TC = 100°C) |
-10.5 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
-60 |
A | |
|
VGSS |
Gate-Source Voltage |
±30 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
1157 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
-15 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
10 |
mJ | |
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
-5.0 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) |
3.75 |
W | |
|
Power Dissipation (TC = 25°C) - Derate above 25°C |
100 |
W | ||
|
0.57 |
W/°C | |||
|
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
FQI15P12 Features
• -15A, -120V, RDS(on) = 0.2 @VGS = -10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 110 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 110 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
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