FQI13N50C, FQI140N03L, FQI14N15 Selling Leads, Datasheet
Package Cooled:TO-262 D/C:09+
FQI13N50C, FQI140N03L, FQI14N15 Datasheet download
Part Number: FQI13N50C
MFG: --
Package Cooled: TO-262
D/C: 09+
FQI13N50C, FQI140N03L, FQI14N15
- Table of contents:
Info of FQI13N50C
Info of FQI140N03L
Info of FQI14N15
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About FQI13N50C
PDF/DataSheet Download
Datasheet: FQI13N50C
File Size: 662908 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI140N03L
PDF/DataSheet Download
Datasheet: FQI140N03L
File Size: 659140 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI14N15
PDF/DataSheet Download
Datasheet: FQI14N15
File Size: 807185 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI13N50C General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
FQI13N50C Maximum Ratings
| Symbol | Parameter |
FQB13N50C / FQI13N50C |
Units |
| VDSS | Drain-Source Voltage |
500 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
13 |
A |
|
8 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
52 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
860 |
mJ |
| IAR | Avalanche Current (Note 1) |
13 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
19.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
195 |
W | |
|
1.56 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI13N50C Features
• 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V
• Low gate charge ( typical 43nC)
• Low Crss ( typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 43nC)
• Low Crss ( typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQI140N03L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
FQI140N03L Maximum Ratings
| Symbol | Parameter |
FQB140N03L / FQI140N03L |
Units |
| VDSS | Drain-Source Voltage |
30 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
140 |
A |
|
99 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
490 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
710 |
mJ |
| IAR | Avalanche Current (Note 1) |
140 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
18.0 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
180 |
W | |
|
1.2 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI140N03L Features
• 140A, 30V, RDS(on) = 0.0045Ω @VGS = 10 V
• Low gate charge ( typical 73 nC)
• Low Crss ( typical 580 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 73 nC)
• Low Crss ( typical 580 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
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