FQI12P20, FQI13N06, FQI13N06L Selling Leads, Datasheet
Package Cooled:TO-262 D/C:09+
FQI12P20, FQI13N06, FQI13N06L Datasheet download
Part Number: FQI12P20
MFG: --
Package Cooled: TO-262
D/C: 09+
FQI12P20, FQI13N06, FQI13N06L
- Table of contents:
Info of FQI12P20
Info of FQI13N06
Info of FQI13N06L
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About FQI12P20
PDF/DataSheet Download
Datasheet: FQI12P20
File Size: 648057 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI13N06
PDF/DataSheet Download
Datasheet: FQI13N06
File Size: 688692 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI13N06L
PDF/DataSheet Download
Datasheet: FQI13N06L
File Size: 682592 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI12P20 General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
FQI12P20 Maximum Ratings
| Symbol | Parameter |
FQB12P20 / FQI12P20 |
Units |
| VDSS | Drain-Source Voltage |
-200 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-11.5 |
A |
|
-7.27 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
-46 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
810 |
mJ |
| IAR | Avalanche Current (Note 1) |
-11.5 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
12 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-5.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
120 |
W | |
|
0.96 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI12P20 Features
• -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQI13N06 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
FQI13N06 Maximum Ratings
| Symbol | Parameter |
FQB13N06 / FQI13N06 |
Units |
| VDSS | Drain-Source Voltage |
60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
13 |
A |
|
9.2 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
52 |
A |
| VGSS | Gate-Source Voltage |
±25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
85 |
mJ |
| IAR | Avalanche Current (Note 1) |
13 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
4.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
45 |
W | |
|
0.3 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI13N06 Features
• 13A, 60V, RDS(on) = 0.135Ω @VGS = 10 V
• Low gate charge ( typical 5.8 nC)
• Low Crss ( typical 15 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 5.8 nC)
• Low Crss ( typical 15 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
FQI13N06L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
FQI13N06L Maximum Ratings
| Symbol | Parameter |
FQB13N06L / FQI13N06L |
Units |
| VDSS | Drain-Source Voltage |
60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
13.6 |
A |
|
9.6 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
54.4 |
A |
| VGSS | Gate-Source Voltage |
±20 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
90 |
mJ |
| IAR | Avalanche Current (Note 1) |
13.6 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
4.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
45 |
W | |
|
0.3 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI13N06L Features
• 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V
• Low gate charge ( typical 4.8 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 4.8 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
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