FQI19N10, FQI19N10L, FQI19N20 Selling Leads, Datasheet
Package Cooled:TO-262 D/C:09+
FQI19N10, FQI19N10L, FQI19N20 Datasheet download
Part Number: FQI19N10
MFG: --
Package Cooled: TO-262
D/C: 09+
Package Cooled:TO-262 D/C:09+
FQI19N10, FQI19N10L, FQI19N20 Datasheet download
MFG: --
Package Cooled: TO-262
D/C: 09+
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PDF/DataSheet Download
Datasheet: FQI19N10
File Size: 589209 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQI19N10L
File Size: 623705 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQI19N20
File Size: 740948 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Symbol | Parameter |
FQB19N10 / FQI19N10 |
Units |
VDSS | Drain-Source Voltage |
100 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
19 |
A |
13.5 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
76 |
A |
VGSS | Gate-Source Voltage |
± 25 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
220 |
mJ |
IAR | Avalanche Current (Note 1) |
19 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
7.5 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
75 |
W | |
0.5 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.
Symbol | Parameter |
FQB19N10L / FQI19N10L |
Units |
VDSS | Drain-Source Voltage |
100 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
19 |
A |
13.5 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
76 |
A |
VGSS | Gate-Source Voltage |
± 20 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
220 |
mJ |
IAR | Avalanche Current (Note 1) |
19 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
7.5 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
75 |
W | |
0.5 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |