FQI19N20C, FQI19N20L, FQI1N60 Selling Leads, Datasheet
Package Cooled:TO-262 D/C:TO
FQI19N20C, FQI19N20L, FQI1N60 Datasheet download
Part Number: FQI19N20C
MFG: --
Package Cooled: TO-262
D/C: TO
FQI19N20C, FQI19N20L, FQI1N60
- Table of contents:
Info of FQI19N20C
Info of FQI19N20L
Info of FQI1N60
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About FQI19N20C
PDF/DataSheet Download
Datasheet: FQI19N20C
File Size: 897695 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI19N20L
PDF/DataSheet Download
Datasheet: FQI19N20L
File Size: 767737 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI1N60
PDF/DataSheet Download
Datasheet: FQI1N60
File Size: 558516 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI19N20C General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction
FQI19N20C Maximum Ratings
|
Symbol |
Parameter |
FQB19N20C / FQI19N20C |
Units | |
|
VDSS |
Drain-Source Voltage |
200 |
V | |
|
ID |
Drain Current |
- Continuous (TC =25°C) |
19.0 |
A |
|
|
- Continuous (TC = 100°C) |
12.1 |
A | |
|
IDM |
Drain Current Pulsed (Note 1) |
76.0 |
A | |
|
VGSS |
Gate-Source Voltage |
±30 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
433 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
19.0 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
13.9 |
mJ | |
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) |
3.13 |
W | |
|
Power Dissipation (TC = 25°C) |
139 |
W | ||
|
- Derate above 25°C |
1,11 |
W/°C | ||
|
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
FQI19N20C Features
19.0A, 200V, RDS(on)= 0.17 @VGS= 10 V
Low gate charge ( typical 40.5 nC)
Low Crss ( typical 85 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Low gate charge ( typical 40.5 nC)
Low Crss ( typical 85 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
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