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FQI1P50, FQI20N06, FQI20N06L

Table of contents:
Info of FQI1P50
Info of FQI20N06
Info of FQI20N06L

FQI1P50, FQI20N06, FQI20N06L Selling Leads, Datasheet

Package Cooled:TO-262 D/C:TO

FQI1P50, FQI20N06, FQI20N06L Datasheet download

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Part Number: FQI1P50

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Package Cooled: TO-262

D/C: TO

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FQI1P50 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.

FQI1P50 Maximum Ratings

Symbol	Parameter	FQB1P50 / FQI1P50	Units
VDSS	Drain-Source Voltage	-500	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	-1.5	A
ID		-0.95	A
IDM	Drain Current - Pulsed (Note 1)	-6.0	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	110	mJ
IAR	Avalanche Current (Note 1)	-1.5	A
EAR	Repetitive Avalanche Energy (Note 1)	6.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-4.5	V/ns
PD	Power Dissipation (TA = 25°C) *	3.13	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	63	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	0.51	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQI1P50 Features

• -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V
• Low gate charge ( typical 11 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQI20N06 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

FQI20N06 Maximum Ratings

Symbol	Parameter	FQB20N06 / FQI20N06	Units
VDSS	Drain-Source Voltage	60	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	20	A
ID		14.1	A
IDM	Drain Current - Pulsed (Note 1)	80	A
VGSS	Gate-Source Voltage	±25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	155	mJ
IAR	Avalanche Current (Note 1)	20	A
EAR	Repetitive Avalanche Energy (Note 1)	5.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
PD	Power Dissipation (TA = 25°C) *	3.75	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	53	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	0.35	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQI20N06 Features

• 20A, 60V, RDS(on) = 0.06Ω @VGS = 10 V
• Low gate charge ( typical 11.5 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQI20N06L General Description

FQI20N06L Maximum Ratings

Symbol	Parameter	FQB20N06L / FQI20N06L	Units
VDSS	Drain-Source Voltage	60	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	21	A
ID		14.7	A
IDM	Drain Current - Pulsed (Note 1)	84	A
VGSS	Gate-Source Voltage	±20	V
EAS	Single Pulsed Avalanche Energy (Note 2)	170	mJ
IAR	Avalanche Current (Note 1)	21	A
EAR	Repetitive Avalanche Energy (Note 1)	5.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
PD	Power Dissipation (TA = 25°C) *	3.75	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	53	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	0.35	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQI20N06L Features

• 21A, 60V, RDS(on) = 0.055Ω @VGS = 10 V
• Low gate charge ( typical 9.5 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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