FQI22N30, FQI22P10, FQI24N08 Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO D/C:TO
FQI22N30, FQI22P10, FQI24N08 Datasheet download
Part Number: FQI22N30
MFG: FAIRCHILD
Package Cooled: TO
D/C: TO
FQI22N30, FQI22P10, FQI24N08
- Table of contents:
Info of FQI22N30
Info of FQI22P10
Info of FQI24N08
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About FQI10N20
PDF/DataSheet Download
Datasheet: FQI10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI22P10
PDF/DataSheet Download
Datasheet: FQI22P10
File Size: 651538 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI24N08
PDF/DataSheet Download
Datasheet: FQI24N08
File Size: 737016 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI22P10 General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
FQI22P10 Maximum Ratings
| Symbol | Parameter |
FQB22P10 / FQI22P10 |
Units |
| VDSS | Drain-Source Voltage |
-100 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-22 |
A |
|
-15.6 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
-88 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
710 |
mJ |
| IAR | Avalanche Current (Note 1) |
-22 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
12.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-6.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
125 |
W | |
|
0.83 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI22P10 Features
• -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 160 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 160 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
FQI24N08 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
FQI24N08 Maximum Ratings
| Symbol | Parameter |
FQB24N08 / FQI24N08 |
Units |
| VDSS | Drain-Source Voltage |
80 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
24 |
A |
|
17 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
96 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
230 |
mJ |
| IAR | Avalanche Current (Note 1) |
24 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
7.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
75 |
W | |
|
0.5 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI24N08 Features
• 24A, 80V, RDS(on) = 0.06Ω @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
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