FQI27P06, FQI28N15, FQI2N30 Selling Leads, Datasheet
Package Cooled:TO-262 D/C:09+
FQI27P06, FQI28N15, FQI2N30 Datasheet download
Part Number: FQI27P06
MFG: --
Package Cooled: TO-262
D/C: 09+
FQI27P06, FQI28N15, FQI2N30
- Table of contents:
Info of FQI27P06
Info of FQI28N15
Info of FQI2N30
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About FQI27P06
PDF/DataSheet Download
Datasheet: FQI27P06
File Size: 717156 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI28N15
PDF/DataSheet Download
Datasheet: FQI28N15
File Size: 642892 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI2N30
PDF/DataSheet Download
Datasheet: FQI2N30
File Size: 764419 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI28N15 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching for DC/DC converte
FQI28N15 Maximum Ratings
|
Symbol |
Parameter |
FQB28N15 / FQI28N15 |
Units | |
|
VDSS |
Drain-Source Voltage |
150 |
V | |
|
ID |
Drain Current |
- Continuous (TC =25°C) |
28 |
A |
|
- Continuous (TC = 100°C) |
19.8 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
112 |
A | |
|
VGSS |
Gate-Source Voltage |
±25 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
300 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
28 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
16..8 |
mJ | |
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) |
3.75 |
W | |
|
Power Dissipation (TC = 25°C) |
168 |
W | ||
|
- Derate above 25°C |
1.12 |
W/°C | ||
|
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
FQI28N15 Features
• 28A, 150V, RDS(on) = 0.09 @VGS = 10 V
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
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