FQI2N50, FQI2N50TU, FQI2N60 Selling Leads, Datasheet
MFG:FSC Package Cooled:TO D/C:149
FQI2N50, FQI2N50TU, FQI2N60 Datasheet download
Part Number: FQI2N50
MFG: FSC
Package Cooled: TO
D/C: 149
MFG:FSC Package Cooled:TO D/C:149
FQI2N50, FQI2N50TU, FQI2N60 Datasheet download
MFG: FSC
Package Cooled: TO
D/C: 149
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Datasheet: FQI2N50
File Size: 750221 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: FQI10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: FQI2N60
File Size: 594866 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
Symbol | Parameter |
FQB2N60 / FQI2N60 |
Units |
VDSS | Drain-Source Voltage |
600 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
2.4 |
A |
1.5 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
9.6 |
A |
VGSS | Gate-Source Voltage |
±30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
140 |
mJ |
IAR | Avalanche Current (Note 1) |
2.4 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
6.4 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
64 |
W | |
0.51 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |