FQI2N90, FQI2NA90, FQI2P25 Selling Leads, Datasheet
Package Cooled:TO-262 D/C:09+
FQI2N90, FQI2NA90, FQI2P25 Datasheet download
Part Number: FQI2N90
MFG: --
Package Cooled: TO-262
D/C: 09+
FQI2N90, FQI2NA90, FQI2P25
- Table of contents:
Info of FQI2N90
Info of FQI2NA90
Info of FQI2P25
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About FQI2N90
PDF/DataSheet Download
Datasheet: FQI2N90
File Size: 777960 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI2NA90
PDF/DataSheet Download
Datasheet: FQI2NA90
File Size: 724184 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI2P25
PDF/DataSheet Download
Datasheet: FQI2P25
File Size: 573107 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI2NA90 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
FQI2NA90 Maximum Ratings
| Symbol | Parameter |
FQB2NA90 / FQI2NA90 |
Units |
| VDSS | Drain-Source Voltage |
900 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
2.8 |
A |
|
1.77 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
11.2 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
310 |
mJ |
| IAR | Avalanche Current (Note 1) |
2.8 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
10.7 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
107 |
W | |
|
0.85 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI2NA90 Features
• 2.8A, 900V, RDS(on) = 5.8 Ω @ VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQI2P25 General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
FQI2P25 Maximum Ratings
| Symbol | Parameter |
FQB2P25 / FQI2P25 |
Units |
| VDSS | Drain-Source Voltage |
-250 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-2.3 |
A |
|
-1.45 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
-9.2 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
120 |
mJ |
| IAR | Avalanche Current (Note 1) |
-2.3 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
5.2 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-5.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
52 |
W | |
|
0.42 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI2P25 Features
• -2.3A, -250V, RDS(on) = 4.0Ω @VGS = -10 V
• Low gate charge ( typical 6.5 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 6.5 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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