MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:N/A
FQI2P25TU, FQI2P40TU, FQI30N06L Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: N/A
D/C: N/A
Description: MOSFET P-CH 250V 2.3A I2PAK
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PDF/DataSheet Download
Datasheet: FQI10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQI10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQI10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQI2P25TU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25° C | 2.3A |
| Rds On (Max) @ Id, Vgs | 4 Ohm @ 1.15A, 10V |
| Input Capacitance (Ciss) @ Vds | 250pF @ 25V |
| Power - Max | 3.13W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 8.5nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQI2P25TU FQI2P25TU |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
| Symbol | Parameter |
FQB30N06L / FQI30N06L |
Units |
| VDSS | Drain-Source Voltage |
60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
32 |
A |
|
22.6 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
128 |
A |
| VGSS | Gate-Source Voltage |
±20 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
350 |
mJ |
| IAR | Avalanche Current (Note 1) |
32 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
7.9 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
79 |
W | |
|
0.53 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
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