FQI2P40, FQI30N06, FQI32N12V2 Selling Leads, Datasheet
Package Cooled:TO-262 D/C:TO
FQI2P40, FQI30N06, FQI32N12V2 Datasheet download
Part Number: FQI2P40
MFG: --
Package Cooled: TO-262
D/C: TO
FQI2P40, FQI30N06, FQI32N12V2
- Table of contents:
Info of FQI2P40
Info of FQI30N06
Info of FQI32N12V2
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About FQI2P40
PDF/DataSheet Download
Datasheet: FQI2P40
File Size: 600665 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI30N06
PDF/DataSheet Download
Datasheet: FQI30N06
File Size: 679267 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI32N12V2
PDF/DataSheet Download
Datasheet: FQI32N12V2
File Size: 664630 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI2P40 General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.
FQI2P40 Maximum Ratings
| Symbol | Parameter |
FQB2P40 / FQI2P40 |
Units |
| VDSS | Drain-Source Voltage |
-400 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-2.0 |
A |
|
-1.27 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
-8.0 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
120 |
mJ |
| IAR | Avalanche Current (Note 1) |
-2.0 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
6.3 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
63 |
W | |
|
0.51 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI2P40 Features
• -2.0A, -400V, RDS(on) = 6.5Ω @VGS = -10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQI30N06 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
FQI30N06 Maximum Ratings
| Symbol | Parameter |
FQB30N06 / FQI30N06 |
Units |
| VDSS | Drain-Source Voltage |
60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
30 |
A |
|
21.3 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
120 |
A |
| VGSS | Gate-Source Voltage |
±25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
280 |
mJ |
| IAR | Avalanche Current (Note 1) |
30 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
7.9 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
79 |
W | |
|
0.53 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI30N06 Features
• 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 40 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 40 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
FQI32N12V2 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.
FQI32N12V2 Maximum Ratings
| Symbol | Parameter |
FQB32N12V2/FQI32N12V2 |
Units |
| VDSS | Drain-Source Voltage |
120 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
32 |
A |
|
23 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
128 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
469 |
mJ |
| IAR | Avalanche Current (Note 1) |
32 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
15 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
150 |
W | |
|
1 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI32N12V2 Features
• 32A, 120V, RDS(on) = 0.05Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 70 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 70 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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