FQI32N20C, FQI33N10L, FQI34N20 Selling Leads, Datasheet
Package Cooled:TO-262 D/C:TO
FQI32N20C, FQI33N10L, FQI34N20 Datasheet download
Part Number: FQI32N20C
MFG: --
Package Cooled: TO-262
D/C: TO
FQI32N20C, FQI33N10L, FQI34N20
- Table of contents:
Info of FQI32N20C
Info of FQI33N10L
Info of FQI34N20
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About FQI32N20C
PDF/DataSheet Download
Datasheet: FQI32N20C
File Size: 932917 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI33N10L
PDF/DataSheet Download
Datasheet: FQI33N10L
File Size: 675901 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI34N20
PDF/DataSheet Download
Datasheet: FQI34N20
File Size: 788153 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI32N20C General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballastsbased on half bridge topology.
FQI32N20C Maximum Ratings
| Symbol | Parameter |
FQB32N20C / FQI32N20C |
Units |
| VDSS | Drain-Source Voltage |
200 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
28.0 |
A |
|
17.8 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
112 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
955 |
mJ |
| IAR | Avalanche Current (Note 1) |
28.0 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
15.6 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
3.13 |
W |
|
156 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI32N20C Features
• 28A, 200V, RDS(on) = 0.082Ω @VGS = 10 V
• Low gate charge ( typical 82.5 nC)
• Low Crss ( typical 185 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 82.5 nC)
• Low Crss ( typical 185 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQI33N10L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.
FQI33N10L Maximum Ratings
| Symbol | Parameter |
FQB33N10L / FQI33N10L |
Units |
| VDSS | Drain-Source Voltage |
100 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
33 |
A |
|
23 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
132 |
A |
| VGSS | Gate-Source Voltage |
± 20 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
430 |
mJ |
| IAR | Avalanche Current (Note 1) |
33 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
12.7 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
127 |
W | |
|
0.85 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI33N10L Features
• 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 70 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 70 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
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