FQI34N20L, FQI34P10, FQI3652 Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO D/C:TO
FQI34N20L, FQI34P10, FQI3652 Datasheet download
Part Number: FQI34N20L
MFG: FAIRCHILD
Package Cooled: TO
D/C: TO
FQI34N20L, FQI34P10, FQI3652
- Table of contents:
Info of FQI34N20L
Info of FQI34P10
Info of FQI3652
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About FQI34N20L
PDF/DataSheet Download
Datasheet: FQI34N20L
File Size: 677814 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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About FQI34P10
PDF/DataSheet Download
Datasheet: FQI34P10
File Size: 734334 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI10N20
PDF/DataSheet Download
Datasheet: FQI10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI34N20L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.
FQI34N20L Maximum Ratings
|
Symbol |
Parameter |
FQB5N20L / FQI5N20L |
Units | |
|
VDSS |
Drain-Source Voltage |
200 |
V | |
|
ID |
Drain Current |
- Continuous (TC =25°C) |
31 |
A |
|
- Continuous (TC = 100°C) |
20 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
124 |
A | |
|
VGSS |
Gate-Source Voltage |
±20 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
640 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
31 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
18 |
mJ | |
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) |
3.13 |
W | |
|
Power Dissipation (TC = 25°C) |
180 |
W | ||
|
- Derate above 25°C |
1.43 |
W/°C | ||
|
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
FQI34N20L Features
• 31A, 200V, RDS(on) = 0.075 @VGS = 10 V
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 52 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct opration from logic drivers
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 52 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct opration from logic drivers
FQI34P10 General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
FQI34P10 Maximum Ratings
| Symbol | Parameter |
FQB34P10 / FQI34P10 |
Units |
| VDSS | Drain-Source Voltage |
-100 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-33.5 |
A |
|
-23.5 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
-134 |
A |
| VGSS | Gate-Source Voltage |
±25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
2200 |
mJ |
| IAR | Avalanche Current (Note 1) |
-33.5 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
15.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-6.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
155 |
W | |
|
1.03 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI34P10 Features
·-33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V
· Low gate charge ( typical 85 nC)
· Low Crss ( typical 170 pF)
· Fast switching
· 100% avalanche tested
· Improved dv/dt capability
·175°C maximum junction temperature rating
· Low gate charge ( typical 85 nC)
· Low Crss ( typical 170 pF)
· Fast switching
· 100% avalanche tested
· Improved dv/dt capability
·175°C maximum junction temperature rating
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