FQI3N60, FQI3N80, FQI3N90 Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO D/C:TO
FQI3N60, FQI3N80, FQI3N90 Datasheet download
Part Number: FQI3N60
MFG: FAIRCHILD
Package Cooled: TO
D/C: TO
MFG:FAIRCHILD Package Cooled:TO D/C:TO
FQI3N60, FQI3N80, FQI3N90 Datasheet download
MFG: FAIRCHILD
Package Cooled: TO
D/C: TO
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Datasheet: FQI3N60
File Size: 595782 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: FQI3N80
File Size: 677849 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQI3N90
File Size: 713959 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
Symbol | Parameter |
FQB3N60 / FQI3N60 |
Units |
VDSS | Drain-Source Voltage |
600 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
3.0 |
A |
1.9 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
12 |
A |
VGSS | Gate-Source Voltage |
±30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
200 |
mJ |
IAR | Avalanche Current (Note 1) |
3.0 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
7.5 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
75 |
W | |
0.6 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
Symbol | Parameter |
FQB3N80 / FQI3N80 |
Units |
VDSS | Drain-Source Voltage |
800 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
3.0 |
A |
1.9 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
12 |
A |
VGSS | Gate-Source Voltage |
±30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
320 |
mJ |
IAR | Avalanche Current (Note 1) |
3.0 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
10.7 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
107 |
W | |
0.85 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
Symbol | Parameter |
FQB3N90 / FQI3N90 |
Units |
VDSS | Drain-Source Voltage |
900 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
3.6 |
A |
2.28 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
14.4 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
450 |
mJ |
IAR | Avalanche Current (Note 1) |
3.6 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
13 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
130 |
W | |
1.04 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |