FQI44N10, FQI45N03L, FQI45N15V2 Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:TO
FQI44N10, FQI45N03L, FQI45N15V2 Datasheet download
Part Number: FQI44N10
MFG: Fairchild
Package Cooled: N/A
D/C: TO
FQI44N10, FQI45N03L, FQI45N15V2
- Table of contents:
Info of FQI44N10
Info of FQI45N03L
Info of FQI45N15V2
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About FQI44N10
PDF/DataSheet Download
Datasheet: FQI44N10
File Size: 655464 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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About FQI10N20
PDF/DataSheet Download
Datasheet: FQI10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI45N15V2
PDF/DataSheet Download
Datasheet: FQI45N15V2
File Size: 684129 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI44N10 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
FQI44N10 Maximum Ratings
| Symbol | Parameter |
FQB44N10 / FQI44N10 |
Units |
| VDSS | Drain-Source Voltage |
100 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
43.5 |
A |
|
30.8 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
174 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
530 |
mJ |
| IAR | Avalanche Current (Note 1) |
43.5 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
14.6 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
146 |
W | |
|
0.97 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI44N10 Features
• 43.5A, 100V, RDS(on) = 0.039Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
FQI45N15V2 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.
FQI45N15V2 Maximum Ratings
|
Symbol |
Parameter |
FQB45N15V2/FQI45N15V2 |
Units | |
|
VDSS |
Drain-Source Voltage |
150 |
V | |
|
ID |
Drain Current |
- Continuous (TC =25°C) |
45 |
A |
|
- Continuous (TC = 100°C) |
31 |
A | ||
|
IDM |
DrainCurrentPulsed (Note 1) |
180 |
A | |
|
VGSS |
Gate-Source Voltage |
± 30 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
1124 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
45 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
22 |
mJ | |
|
d v/dt |
PeakDiode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD TJ, TSTG |
Power Dissipation (TC = 25°C) |
220 |
W | |
|
- Derate above 25°C |
1.47 |
W/°C | ||
|
Operating and |
-55 to +150 |
°C | ||
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
FQI45N15V2 Features
• 45A, 150V, RDS(on) = 0.04 @VGS = 10 V
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 135 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 135 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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