FQI46N15, FQI47P06, FQI4N20 Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO D/C:TO
FQI46N15, FQI47P06, FQI4N20 Datasheet download
Part Number: FQI46N15
MFG: FAIRCHILD
Package Cooled: TO
D/C: TO
FQI46N15, FQI47P06, FQI4N20
- Table of contents:
Info of FQI46N15
Info of FQI47P06
Info of FQI4N20
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About FQI46N15
PDF/DataSheet Download
Datasheet: FQI46N15
File Size: 787851 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI47P06
PDF/DataSheet Download
Datasheet: FQI47P06
File Size: 736156 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI4N20
PDF/DataSheet Download
Datasheet: FQI4N20
File Size: 720939 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI47P06 General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
FQI47P06 Maximum Ratings
| Symbol | Parameter |
FQB47P06 / FQI47P06 |
Units |
| VDSS | Drain-Source Voltage |
-60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-47 |
A |
|
-33.2 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
-188 |
A |
| VGSS | Gate-Source Voltage |
±25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
820 |
mJ |
| IAR | Avalanche Current (Note 1) |
-47 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
16 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-7.0 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
160 |
W |
|
1.06 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI47P06 Features
• -47A, -60V, RDS(on) = 0.026Ω @VGS = -10 V
• Low gate charge ( typical 84 nC)
• Low Crss ( typical 320 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 84 nC)
• Low Crss ( typical 320 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
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