FQI4N20L, FQI4N25, FQI4N50 Selling Leads, Datasheet
Package Cooled:TO-262 D/C:TO
FQI4N20L, FQI4N25, FQI4N50 Datasheet download
Part Number: FQI4N20L
MFG: --
Package Cooled: TO-262
D/C: TO
FQI4N20L, FQI4N25, FQI4N50
- Table of contents:
Info of FQI4N20L
Info of FQI4N25
Info of FQI4N50
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About FQI4N20L
PDF/DataSheet Download
Datasheet: FQI4N20L
File Size: 529712 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI4N25
PDF/DataSheet Download
Datasheet: FQI4N25
File Size: 747034 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI4N50
PDF/DataSheet Download
Datasheet: FQI4N50
File Size: 767052 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI4N20L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
FQI4N20L Maximum Ratings
|
Symbol |
Parameter |
FQB4N20L / FQI4N20L |
Units | |
|
VDSS |
Drain-Source Voltage |
200 |
V | |
|
ID |
Drain Current |
- Continuous (TC =25°C) |
3.8 |
A |
|
- Continuous (TC = 100°C) |
2.4 |
A | ||
|
IDM |
DrainCurrentPulsed (Note 1) |
15.2 |
A | |
|
VGSS |
Gate-Source Voltage |
± 20 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
52 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
3.8 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
4.5 |
mJ | |
|
d v/dt |
PeakDiode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD TJ, TSTG |
Power Dissipation (TC = 25°C) |
45 |
W | |
|
- Derate above 25°C |
0.36 |
W/°C | ||
|
Operating and |
-55 to +150 |
°C | ||
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
FQI4N20L Features
• 3.8A, 200V, RDS(on) = 1.35 @VGS = 10 V
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct operation from logic drivers
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct operation from logic drivers
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