FQI4P25, FQI4P40, FQI50N06 Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO D/C:TO
FQI4P25, FQI4P40, FQI50N06 Datasheet download
Part Number: FQI4P25
MFG: FAIRCHILD
Package Cooled: TO
D/C: TO
FQI4P25, FQI4P40, FQI50N06
- Table of contents:
Info of FQI4P25
Info of FQI4P40
Info of FQI50N06
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About FQI4P25
PDF/DataSheet Download
Datasheet: FQI4P25
File Size: 593139 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI4P40
PDF/DataSheet Download
Datasheet: FQI4P40
File Size: 657843 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI50N06
PDF/DataSheet Download
Datasheet: FQI50N06
File Size: 663613 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI4P25 General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters.
FQI4P25 Maximum Ratings
| Symbol | Parameter |
FQB4P25 / FQI4P25 |
Units |
| VDSS | Drain-Source Voltage |
-250 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-4.0 |
A |
|
-2.53 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
-16 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
280 |
mJ |
| IAR | Avalanche Current (Note 1) |
-4.0 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
7.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-5.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
75 |
W | |
|
0.6 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI4P25 Features
• -4.0A, -250V, RDS(on) = 2.1Ω @VGS = -10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 10.3 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 10.3 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQI4P40 General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.
FQI4P40 Maximum Ratings
| Symbol | Parameter |
FQB4P40 / FQI4P40 |
Units |
| VDSS | Drain-Source Voltage |
-400 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-3.5 |
A |
|
-2.2 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
-14 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
260 |
mJ |
| IAR | Avalanche Current (Note 1) |
-3.5 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
8.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
85 |
W | |
|
0.68 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI4P40 Features
• -3.5A, -400V, RDS(on) = 3.1Ω @VGS = -10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQI50N06 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
FQI50N06 Maximum Ratings
| Symbol | Parameter |
FQB50N06 / FQI50N06 |
Units |
| VDSS | Drain-Source Voltage |
60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
50 |
A |
|
35.4 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
200 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
490 |
mJ |
| IAR | Avalanche Current (Note 1) |
50 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
12 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
120 |
W | |
|
0.8 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI50N06 Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
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