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FQI5N80, FQI5N90, FQI5P10

Table of contents:
Info of FQI5N80
Info of FQI5N90
Info of FQI5P10

FQI5N80, FQI5N90, FQI5P10 Selling Leads, Datasheet

Package Cooled:TO-262 D/C:TO

FQI5N80, FQI5N90, FQI5P10 Datasheet download

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Part Number: FQI5N80

MFG: --

Package Cooled: TO-262

D/C: TO

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FQI5N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQI5N80 Maximum Ratings

Symbol	Parameter	FQB5N80 / FQI5N80	Units
VDSS	Drain-Source Voltage	800	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	4.8	A
ID		3.04	A
IDM	Drain Current - Pulsed (Note 1)	19.2	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	590	mJ
IAR	Avalanche Current (Note 1)	4.8	A
EAR	Repetitive Avalanche Energy (Note 1)	14	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
PD	Power Dissipation (TA = 25°C) *	3.13	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	140	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	1.12	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQI5N80 Features

• 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQI5N90 General Description

FQI5N90 Maximum Ratings

Symbol	Parameter	FQB5N90 / FQI5N90	Units
VDSS	Drain-Source Voltage	900	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	5.4	A
ID		3.42	A
IDM	Drain Current - Pulsed (Note 1)	21.6	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	660	mJ
IAR	Avalanche Current (Note 1)	5.4	A
EAR	Repetitive Avalanche Energy (Note 1)	15.8	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
PD	Power Dissipation (TA = 25°C) *	3.13	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	158	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	1.27	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQI5N90 Features

• 5.4A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQI5P10 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FQI5P10 Maximum Ratings

Symbol	Parameter	FQB5P10 / FQI5P10	Units
VDSS	Drain-Source Voltage	-100	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	-4.5	A
ID		-3.18	A
IDM	Drain Current - Pulsed (Note 1)	-18	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	55	mJ
IAR	Avalanche Current (Note 1)	-4.5	A
EAR	Repetitive Avalanche Energy (Note 1)	4.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-6.0	V/ns
PD	Power Dissipation (TA = 25°C) *	3.75	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	40	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	0.27	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQI5P10 Features

• -4.5A, -100V, RDS(on) = 1.05Ω @VGS = -10 V
• Low gate charge ( typical 6.3 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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