FQI6N80, FQI6N90, FQI6P25 Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO D/C:TO
FQI6N80, FQI6N90, FQI6P25 Datasheet download
Part Number: FQI6N80
MFG: FAIRCHILD
Package Cooled: TO
D/C: TO
MFG:FAIRCHILD Package Cooled:TO D/C:TO
FQI6N80, FQI6N90, FQI6P25 Datasheet download
MFG: FAIRCHILD
Package Cooled: TO
D/C: TO
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PDF/DataSheet Download
Datasheet: FQI6N80
File Size: 699966 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQI6N90
File Size: 610760 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQI6P25
File Size: 532537 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
Symbol | Parameter |
FQB6N80 / FQI6N80 |
Units |
VDSS | Drain-Source Voltage |
800 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
5.8 |
A |
3.67 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
23.2 |
A |
VGSS | Gate-Source Voltage |
±30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
680 |
mJ |
IAR | Avalanche Current (Note 1) |
5.8 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
15.8 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
158 |
W | |
1.27 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switch mode power supplies.
Symbol | Parameter |
FQB6N90 / FQI6N90 |
Units |
VDSS | Drain-Source Voltage |
900 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
5.8 |
A |
3.7 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
23.2 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
712 |
mJ |
IAR | Avalanche Current (Note 1) |
5.8 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
16.7 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
167 |
W | |
1.34 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
Symbol | Parameter |
FQB6P25 / FQI6P25 |
Units |
VDSS | Drain-Source Voltage |
-250 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-6.0 |
A |
-3.8 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
-24 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
540 |
mJ |
IAR | Avalanche Current (Note 1) |
-6.0 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
9.0 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-5.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
90 |
W | |
0.72 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |