FQI70N08, FQI70N10, FQI7N10 Selling Leads, Datasheet
Package Cooled:TO-262 D/C:09+
FQI70N08, FQI70N10, FQI7N10 Datasheet download
Part Number: FQI70N08
MFG: --
Package Cooled: TO-262
D/C: 09+
FQI70N08, FQI70N10, FQI7N10
- Table of contents:
Info of FQI70N08
Info of FQI70N10
Info of FQI7N10
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About FQI70N08
PDF/DataSheet Download
Datasheet: FQI70N08
File Size: 688856 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI70N10
PDF/DataSheet Download
Datasheet: FQI70N10
File Size: 660893 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI7N10
PDF/DataSheet Download
Datasheet: FQI7N10
File Size: 561505 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI70N08 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
FQI70N08 Maximum Ratings
| Symbol | Parameter |
FQB70N08 / FQI70N08 |
Units |
| VDSS | Drain-Source Voltage |
80 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
70 |
A |
|
49.5 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
280 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
1150 |
mJ |
| IAR | Avalanche Current (Note 1) |
70 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
15.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
155 |
W | |
|
1.03 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI70N08 Features
• 70A, 80V, RDS(on) = 0.017Ω @VGS = 10 V
• Low gate charge ( typical 75 nC)
• Low Crss ( typical 180 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 75 nC)
• Low Crss ( typical 180 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
FQI70N10 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
FQI70N10 Maximum Ratings
| Symbol | Parameter |
FQB70N10 / FQI70N10 |
Units |
| VDSS | Drain-Source Voltage |
100 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
57 |
A |
|
40.3 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
228 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
1300 |
mJ |
| IAR | Avalanche Current (Note 1) |
57 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
16 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
160 |
W | |
|
1.06 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI70N10 Features
• 57A, 100V, RDS(on) = 0.023Ω @VGS = 10 V
• Low gate charge ( typical 85 nC)
• Low Crss ( typical 150 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 85 nC)
• Low Crss ( typical 150 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
FQI7N10 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
FQI7N10 Maximum Ratings
| Symbol | Parameter |
FQB7N10 / FQI7N10 |
Units |
| VDSS | Drain-Source Voltage |
100 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
7.3 |
A |
|
5.15 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
29.2 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
50 |
mJ |
| IAR | Avalanche Current (Note 1) |
7.3 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
4.0 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
40 |
W | |
|
0.27 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI7N10 Features
• 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V
• Low gate charge ( typical 5.8 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 5.8 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
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