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FQI7N10L, FQI7N20, FQI7N20L

Table of contents:
Info of FQI7N10L
Info of FQI7N20
Info of FQI7N20L

FQI7N10L, FQI7N20, FQI7N20L Selling Leads, Datasheet

Package Cooled:TO-262 D/C:09+

FQI7N10L, FQI7N20, FQI7N20L Datasheet download

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Part Number: FQI7N10L

MFG: --

Package Cooled: TO-262

D/C: 09+

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FQI7N10L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

FQI7N10L Maximum Ratings

Symbol	Parameter	FQB7N10L / FQI7N10L	Units
VDSS	Drain-Source Voltage	100	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	7.3	A
ID		5.15	A
IDM	Drain Current - Pulsed (Note 1)	29.2	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy (Note 2)	50	mJ
IAR	Avalanche Current (Note 1)	7.3	A
EAR	Repetitive Avalanche Energy (Note 1)	4.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.0	V/ns
PD	Power Dissipation (TA = 25°C) *	3.75	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	40	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	0.27	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQI7N10L Features

• 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V
• Low gate charge ( typical 4.6 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirments allowing direct operationfrom logic drives

FQI7N20L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.

FQI7N20L Maximum Ratings

Symbol	Parameter		FQB7N20L / FQI7N20L	Units
V_DSS	Drain-Source Voltage		200	V
I_D	Drain Current	- Continuous (TC =25°C)	6.5	A
I_D	Drain Current	- Continuous (TC = 100°C)	4,11	A
I_DM	Drain Current Pulsed (Note 1)		26	A
V_GSS	Gate-Source Voltage		±20	V
E_AS	Single Pulsed Avalanche Energy (Note 2)		73	mJ
I_AR	Avalanche Current (Note 1)		6.5	A
E_AR	Repetitive Avalanche Energy (Note 1)		6.3	mJ
d _v/dt	Peak Diode Recovery dv/dt (Note 3)		5.5	V/ns
P_D	Power Dissipation (TA = 25°C)		3.13	W
	Power Dissipation (TC = 25°C)		63	W
	- Derate above 25°C		0.51	W/°C
T_{J, TSTG}	Operating and Storage Temperature Range		-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds		300	°C

FQI7N20L Features

• 6.5A, 200V, RDS(on) = 0.75 @VGS = 10 V
• Low gate charge ( typical 6.8 nC)
• Low Crss ( typical 8.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct operation from logic drivers

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