FQI85N06, FQI8N25, FQI8N25TU Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO D/C:TO
FQI85N06, FQI8N25, FQI8N25TU Datasheet download
Part Number: FQI85N06
MFG: FAIRCHILD
Package Cooled: TO
D/C: TO
FQI85N06, FQI8N25, FQI8N25TU
- Table of contents:
Info of FQI85N06
Info of FQI8N25
Info of FQI8N25TU
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About FQI85N06
PDF/DataSheet Download
Datasheet: FQI85N06
File Size: 670063 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI8N25
PDF/DataSheet Download
Datasheet: FQI8N25
File Size: 608104 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI10N20
PDF/DataSheet Download
Datasheet: FQI10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI85N06 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
FQI85N06 Maximum Ratings
| Symbol | Parameter |
FQB85N06 / FQI85N06 |
Units |
| VDSS | Drain-Source Voltage |
60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
85 |
A |
|
60 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
300 |
A |
| VGSS | Gate-Source Voltage |
±25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
810 |
mJ |
| IAR | Avalanche Current (Note 1) |
85 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
16.0 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
160 |
W | |
|
1.07 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI85N06 Features
• 85A, 60V, RDS(on) = 0.010Ω @VGS = 10 V
• Low gate charge ( typically 86 nC)
• Low Crss ( typically 165 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typically 86 nC)
• Low Crss ( typically 165 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
FQI8N25 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply.
FQI8N25 Maximum Ratings
| Symbol | Parameter |
FQB8N25 / FQI8N25 |
Units |
| VDSS | Drain-Source Voltage |
250 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
8.0 |
A |
|
5.0 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
32 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
120 |
mJ |
| IAR | Avalanche Current (Note 1) |
8.0 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
8.7 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
87 |
W | |
|
0.69 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI8N25 Features
• 8.0A, 250V, RDS(on) = 0.55Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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