FQI9N08L, FQI9N15, FQI9N25 Selling Leads, Datasheet
Package Cooled:TO-262 D/C:09+
FQI9N08L, FQI9N15, FQI9N25 Datasheet download
Part Number: FQI9N08L
MFG: --
Package Cooled: TO-262
D/C: 09+
FQI9N08L, FQI9N15, FQI9N25
- Table of contents:
Info of FQI9N08L
Info of FQI9N15
Info of FQI9N25
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About FQI9N08L
PDF/DataSheet Download
Datasheet: FQI9N08L
File Size: 626970 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI9N15
PDF/DataSheet Download
Datasheet: FQI9N15
File Size: 802890 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI9N25
PDF/DataSheet Download
Datasheet: FQI9N25
File Size: 747045 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI9N08L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motorcontrol.
FQI9N08L Maximum Ratings
| Symbol | Parameter |
FQB9N08L / FQI9N08L |
Units |
| VDSS | Drain-Source Voltage |
80 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
9.3 |
A |
|
6.57 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
37.2 |
A |
| VGSS | Gate-Source Voltage |
±20 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
55 |
mJ |
| IAR | Avalanche Current (Note 1) |
9.3 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
4.0 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
40 |
W | |
|
0.27 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI9N08L Features
• 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V
• Low gate charge ( typical 4.7 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirments allowing direct operation from logic drives
• Low gate charge ( typical 4.7 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirments allowing direct operation from logic drives
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