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FQPF3N80C, FQPF3N90, FQPF3P20

Table of contents:
Info of FQPF3N80C
Info of FQPF3N90
Info of FQPF3P20

FQPF3N80C, FQPF3N90, FQPF3P20 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220F D/C:09+

FQPF3N80C, FQPF3N90, FQPF3P20 Datasheet download

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Part Number: FQPF3N80C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220F

D/C: 09+

Description: MOSFET P-CH 200V 2.2A TO-220F

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FQPF3N80C Parameters

Technical/Catalog Information	FQPF3N80C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	4.8 Ohm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds	705pF @ 25V
Power - Max	39W
Packaging	Tube
Gate Charge (Qg) @ Vgs	16.5nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF3N80C FQPF3N80C

FQPF3N80C General Description

These N-Channel enhancement mode power field effec transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

FQPF3N80C Maximum Ratings

Symbol	Parameter	FQP3N80C	FQPF3N80C	Units
V_DSS	Drain-Source Voltage	800		V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C= 100)	3	3 *	A
I_D		1.9	1.9 *	A
I_DM	Drain Current - Pulsed (Note 1)	12	12 *	A
V_GSS	Gate-Source Voltage	± 30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	320		mJ
I_AR	Avalanche Curren (Note 1)	3		A
E_AR	Repetitive Avalanche Energy (Note 1)	10.7		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	107	39	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.85	0.31	W/
T_J , T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQPF3N80C Features

* 3.0A, 800V, R_DS(on) = 4.8 @V_GS = 10 V
* Low gate charge ( typical 13 nC)
* Low Crss ( typical 5.5 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQPF3N90 Parameters

Technical/Catalog Information	FQPF3N90
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	2.1A
Rds On (Max) @ Id, Vgs	4.25 Ohm @ 1.05A, 10V
Input Capacitance (Ciss) @ Vds	910pF @ 25V
Power - Max	43W
Packaging	Tube
Gate Charge (Qg) @ Vgs	26nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF3N90 FQPF3N90

FQPF3N90 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQPF3N90 Maximum Ratings

Symbol	Parameter	FQPF3N90	Units
V_DSS	Drain-Source Voltage	900	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C= 100)	2.1	A
I_D		1.33	A
I_DM	Drain Current - Pulsed (Note 1)	8.4	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	450	mJ
I_AR	Avalanche Current (Note 1)	2.1	A
E_AR	Repetitive Avalanche Energy (Note 1)	4.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	43	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.34	W/
T_J , T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQPF3N90 Features

* 2.1A, 900V, R_DS(on) = 4.25 @ V_GS = 10 V
* Low gate charge ( typical 20 nC)
* Low Crss ( typical 8.0 pF)
*Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQPF3P20 Parameters

Technical/Catalog Information	FQPF3P20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	2.2A
Rds On (Max) @ Id, Vgs	2.7 Ohm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 25V
Power - Max	32W
Packaging	Tube
Gate Charge (Qg) @ Vgs	8nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF3P20 FQPF3P20

FQPF3P20 Maximum Ratings

Symbol	Characteristics	Value	Units
V_DSS	Drain-to-Source Voltage	-200	V
I_D	Continuous Drain Current (T_C = 25)	-2.2	A
I_D	Continuous Drain Current (T_C = 100)	-1.39	A
I_DM	Drain Current-Pulsed	-8.8	A
V_GS	Gate-to-Source Voltage	±30	V
E_AS	Single Pulsed Avalanche Energy	150	mJ
I_AR	Avalanche Current	-2.2	A
E_AR	Repetitive Avalanche Energy	3.2	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.5	V/ns
P_D	Total Power Dissipation (T_C= 25) Linear Derating Factor	32 0.26	W W/
T_J , T_STG	Operating Junction and Storage Temperature Range	-55 to +150
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds	300

FQPF3P20 Features

* Advanced New Design
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Very Low Intrinsic Capacitances
* Excellent Switching Characteristics
* Unrivalled Gate Charge: 6.0nC (Typ.)
* Extended Safe Operating Area
*Lower R_DS(ON) : 2.06 (Typ.)

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