GT50J101, GT50J102, GT50J121 Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:TO-3PL D/C:04+
GT50J101, GT50J102, GT50J121 Datasheet download
Part Number: GT50J101
MFG: TOSHIBA
Package Cooled: TO-3PL
D/C: 04+
GT50J101, GT50J102, GT50J121
- Table of contents:
Info of GT50J101
Info of GT50J102
Info of GT50J121
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About GT50G321
PDF/DataSheet Download
Datasheet: GT50G321
File Size: 294386 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About GT50J102
PDF/DataSheet Download
Datasheet: GT50J102
File Size: 260409 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About GT50J121
PDF/DataSheet Download
Datasheet: GT50J121
File Size: 325258 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
GT50J121 Maximum Ratings
|
Characteristics |
Symbol |
Rating |
Unit | |
| Collector-emitter voltage |
VCES |
600 |
V | |
| Gate-emitter voltage |
VEBS |
±20 |
V | |
| Collector current |
DC |
IC |
50 |
A |
|
1 ms |
ICP |
100 | ||
| Collector power dissipation (Tc = 25) |
PC |
240 |
W | |
| Junction temperature |
Tj |
150 |
||
| Storage temperature range |
Tstg |
-55 to 150 |
||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
GT50J121 Features
• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: tf = 0.05 s (typ.)
• Low switching loss : Eon = 1.30 mJ (typ.)
: Eoff = 1.34 mJ (typ.)
• Low saturation Voltage: VCE (sat) = 2.0 V (typ.)
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: tf = 0.05 s (typ.)
• Low switching loss : Eon = 1.30 mJ (typ.)
: Eoff = 1.34 mJ (typ.)
• Low saturation Voltage: VCE (sat) = 2.0 V (typ.)
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