GT5B131, GT5G103, GT5G131 Selling Leads, Datasheet
MFG:TOS Package Cooled:05+ D/C:13967
GT5B131, GT5G103, GT5G131 Datasheet download
Part Number: GT5B131
MFG: TOS
Package Cooled: 05+
D/C: 13967
GT5B131, GT5G103, GT5G131
- Table of contents:
Info of GT5B131
Info of GT5G103
Info of GT5G131
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About GT50G321
PDF/DataSheet Download
Datasheet: GT50G321
File Size: 294386 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About GT5G103
PDF/DataSheet Download
Datasheet: GT5G103
File Size: 226667 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About GT5G131
PDF/DataSheet Download
Datasheet: GT5G131
File Size: 296509 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
GT5G103 Maximum Ratings
| CHARACTERISTIC | SYMBOL | RATING | UNIT | |
| Collector−Emitter Voltage | VCES | 400 | V | |
| Gate−Emitter Voltage | DC | VGES | ±6 | V |
| Pulse | VGES | ±8 | V | |
| Collector Current | DC | IC | 5 | A |
| 1 ms | ICP | 130 | A | |
| Collector Power Dissipation |
Ta = 25°C | PC | 1.3 | W |
| Tc = 25°C | PC | 20 | W | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | −55~150 | ||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
GT5G103 Features
· 3rd Generation
· High Input Impedance
· Low Saturation Voltage : VCE (sat) = 8 V (Max.) (IC = 130 A)
· Enhancement−Mode
· 4.5 V Gate Drive
· High Input Impedance
· Low Saturation Voltage : VCE (sat) = 8 V (Max.) (IC = 130 A)
· Enhancement−Mode
· 4.5 V Gate Drive
GT5G131 Maximum Ratings
| SYMBOL | PARAMETER | RATING | UNIT |
| VCES | Collector-emitter voltage | 400 | V |
| VGES | Gate-emitter voltage DC Pulse |
±6 | V |
| VGES | Collector current DC Pulse |
±8 | V |
| IC | Collector current DC | 5 | A |
| ICP | Collector current 1 ms | 130 | A |
| PC | Collector power dissipation (Note 1) | 1.1 | W |
| Tj | Junction temperature | 150 | |
| Tstg | Storage temperaturerange | -55 to +150 |
Note 1: Drive operation: Mount on glass epoxy board [1 inch2 * 1.5 t]
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
GT5G131 Features
• 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A)
• Supplied in compact and thin package requires only a small mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• Peak collector current: IC = 130 A (max)
• Supplied in compact and thin package requires only a small mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• Peak collector current: IC = 130 A (max)
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