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GT50J327, GT50N1BS1, GT50N322

Table of contents:
Info of GT50J327
Info of GT50N1BS1
Info of GT50N322

GT50J327, GT50N1BS1, GT50N322 Selling Leads, Datasheet

MFG:360 Package Cooled:TOS D/C:04+

GT50J327, GT50N1BS1, GT50N322 Datasheet download

Five Points

Part Number: GT50J327

MFG: 360

Package Cooled: TOS

D/C: 04+

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GT50J327 Maximum Ratings

Characteristics	Symbol	Rating	Unit
Collector-emitter voltage	V_CES	600	V
Gate-emitter voltage	V_GES	±25	V
Continuous collector @ Tc = 100 current @ Tc = 25	I_C	29	A
Continuous collector @ Tc = 100 current @ Tc = 25	I_C	50	A
Pulsed collector current	I_CP	100	A
Diode forward current DC Pulsed	I_F	20	A
Diode forward current DC Pulsed	I_FP	40	A
Collector power @ Tc = 100 dissipation @ Tc = 25	P_C	56	W
Collector power @ Tc = 100 dissipation @ Tc = 25	P_C	140	W
Junction temperature	Tj	150
Storage temperature range	Tstg	−55 to 150

GT50J327 Features

• Enhancement mode type
• High speed : tf = 0.19 s (typ.) (I_C = 50A)
• Low saturation voltage: V_{CE (sat)} = 1.9 V (typ.) (I_C = 50A)
• FRD included between emitter and collector
• Fourth generation IGBT
• TO-3P(N) (Toshiba package name)

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