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IXTH22N50P, IXTH24N50, IXTH24N50L

Table of contents:
Info of IXTH22N50P
Info of IXTH24N50
Info of IXTH24N50L

IXTH22N50P, IXTH24N50, IXTH24N50L Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:08+/09+

IXTH22N50P, IXTH24N50, IXTH24N50L Picture

IXTH22N50P, IXTH24N50, IXTH24N50L Datasheet download

Five Points

Part Number: IXTH22N50P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-247

D/C: 08+/09+

Description: MOSFET N-CH 500V 24A TO-247

Price Break

150

Unit Price

2.33413

Extended Price

350.12

(All prices are in USD) Prices for reference only

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IXTH22N50P Parameters

Technical/Catalog Information	IXTH22N50P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	22A
Rds On (Max) @ Id, Vgs	270 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2630pF @ 25V
Power - Max	350W
Packaging	Tube
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTH22N50P IXTH22N50P

IXTH24N50 Parameters

Technical/Catalog Information	IXTH24N50
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	24A
Rds On (Max) @ Id, Vgs	230 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4200pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	190nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Other Names	IXTH24N50 IXTH24N50

IXTH24N50 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_CESV_CGR	T_J = 25 to 150 600 T_J= 25 to 150 ; R_GE = 1 M	500 500	V
V_GES V_GEM	Transient	±20 ±30	V V
I_D25 I_DM	T_C = 25 T_C = 25, pulse width limited by TJM	21 24 84 96	A A A A
P_D	T_C = 25	300	W
T_J T_JM T_stg		-50 ... +150 150 -50 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque	1.13/10	Nm/lb.in.
Weight	TO-204 TO-247	18 6	g g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s		300	°C

IXTH24N50 Features

·International standard packages
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Low package inductance (< 5 nH)
- easy to drive and to protect
·Fast switching times

IXTH24N50 Typical Application

·Switch-mode and resonant-mode power supplies
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers

IXTH24N50L Parameters

Technical/Catalog Information	IXTH24N50L
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	24A
Rds On (Max) @ Id, Vgs	300 mOhm @ 500mA, 20V
Input Capacitance (Ciss) @ Vds	2500pF @ 25V
Power - Max	400W
Packaging	Tube
Gate Charge (Qg) @ Vgs	160nC @ 20V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTH24N50L IXTH24N50L

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