PHB21N06LTA, PHB21N06T, PHB222NQ04LT Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:TO-263 D/C:05+
PHB21N06LTA, PHB21N06T, PHB222NQ04LT Datasheet download
Part Number: PHB21N06LTA
MFG: PHILIPS
Package Cooled: TO-263
D/C: 05+
PHB21N06LTA, PHB21N06T, PHB222NQ04LT
- Table of contents:
Info of PHB21N06LTA
Info of PHB21N06T
Info of PHB222NQ04LT
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About PHB100N03LT
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Datasheet: PHB100N03LT
File Size: 339176 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About PHB21N06T
PDF/DataSheet Download
Datasheet: PHB21N06T
File Size: 70892 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About PHB222NQ04LT
PDF/DataSheet Download
Datasheet: PHB222NQ04LT
File Size: 96005 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB21N06T General Description
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHB21N06T Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj |
Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC)1 Drain current (DC)1 Drain current (pulse peak value) Total power dissipation Storage & operating temperature |
- RGS = 20 k - Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 - |
- - - - - - - - 55 |
55 55 20 21 14.7 84 69 175 |
V V V A A A W |
PHB21N06T Connection Diagram
PHB222NQ04LT General Description
Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
PHB222NQ04LT Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | 25 Tj 175 | - | 40 | V |
| VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 40 | V |
| VGS | gate-source voltage (DC) | - | ±15 | V | |
| ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
| Tmb = 100 ; VGS = 10 V; Figure 2 | - | 75 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 300 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) Tmb = 25 | - | 75 | A | |
| ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 240 | A | |
| Avalanche ruggedness | |||||
| EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 75 A; tp = 0.29 ms; VDD 40 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 |
- | 560 | mJ |
PHB222NQ04LT Features
·Logic level threshold
·Very low on-state resistance.
·Very low on-state resistance.
PHB222NQ04LT Typical Application
·Motors, lamps, solenoids
·DC-to-DC converters
·Uninterruptible power supplies
·General industrial applications.
·DC-to-DC converters
·Uninterruptible power supplies
·General industrial applications.
PHB222NQ04LT Connection Diagram
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