PHB69N03T, PHB6N50E, PHB6N60E Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:9800 D/C:TO
PHB69N03T, PHB6N50E, PHB6N60E Datasheet download
Part Number: PHB69N03T
MFG: PHILIPS
Package Cooled: 9800
D/C: TO
PHB69N03T, PHB6N50E, PHB6N60E
- Table of contents:
Info of PHB69N03T
Info of PHB6N50E
Info of PHB6N60E
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About PHB69N03T
PDF/DataSheet Download
Datasheet: PHB69N03T
File Size: 67703 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB6N50E
PDF/DataSheet Download
Datasheet: PHB6N50E
File Size: 79660 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB6N60E
PDF/DataSheet Download
Datasheet: PHB6N60E
File Size: 76580 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB69N03T General Description
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHB69N03T Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj |
Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature |
- RGS = 20 kW - Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 - |
- - - - - - - - 55 |
30 30 20 69 48 240 125 175 |
V V V A A A W |
PHB69N03T Connection Diagram
PHB6N50E General Description
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
The PHP6N50E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB6N50E is supplied in the SOT404 surface mounting package.
The PHP6N50E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB6N50E is supplied in the SOT404 surface mounting package.
PHB6N50E Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 150 Tj = 25 to 150; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
500 500 ± 30 5.9 3.7 24 125 150 |
V V V A A A W |
PHB6N50E Features
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHB6N50E Connection Diagram
PHB6N60E General Description
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
PHB6N60E Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 150 Tj = 25 to 150; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
600 600 ± 30 5.4 3.4 21 125 150 |
V V V A A A W |
PHB6N60E Features
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHB6N60E Connection Diagram
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