PHB9NQ20T, PHC20306, PHC20512 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:9800 D/C:TO
PHB9NQ20T, PHC20306, PHC20512 Datasheet download

Part Number: PHB9NQ20T
MFG: PHILIPS
Package Cooled: 9800
D/C: TO
MFG:PHILIPS Package Cooled:9800 D/C:TO
PHB9NQ20T, PHC20306, PHC20512 Datasheet download

MFG: PHILIPS
Package Cooled: 9800
D/C: TO
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PDF/DataSheet Download
Datasheet: PHB9NQ20T
File Size: 113600 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHC20306
File Size: 56380 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHC20512
File Size: 162690 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
The PHP9NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package
The PHB9NQ20T is supplied in the SOT404 (D2PAK) surface mounting package
The PHD9NQ20T is supplied in the SOT428 (DPAK) surface mounting package
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS ID IDM PD Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175Tj = 25 to 175; RGS = 20 kW Tmb = 25 ; VGS = 10 V Tmb = 100 ; VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - -55 |
200 200 ± 20 8.7 6.2 35 88 175 |
V |

| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| Per channel | |||||
| VDS | drain-source voltage (DC) N-channel P-channel |
- - |
30 -30 |
V V | |
| VGSO | gate-source voltage (DC) | open drain | - | ±20 | V |
| ID | drain current (DC) N-channel P-channel |
Ts 80 note 1 | - - |
8.2 -5.6 |
A A |
| IDM | peak drain current N-channel P-channel |
note 2 | - - |
33 -22.5 |
A A |
| Ptot | total power dissipation | Ts = 80 ; note 3 | - | 3.5 | W |
| Tamb = 25 ; note 4 | - | 2.6 | W | ||
| Tamb = 25 ; note 5 | - | 1.1 | W | ||
| Tamb = 25 ; note 6 | - | 1.5 | W | ||
| Tstg | storage temperature | -55 | +150 | ||
| Tj | operating junction temperature | -55 | 150 | ||
| Source-drain diode | |||||
| IS | source current (DC) N-channel P-channel |
Ts 80 | - - |
3.5 -2.7 |
A A |
| ISM | peak pulsed source current N-channel P-channel |
note 2 | - - |
14 -10.8 |
A A |

| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| Per channel | |||||
| VDS | drain-source voltage (DC) N-channel P-channel |
- - |
30 -30 |
V V | |
| VGSO | gate-source voltage (DC) | open drain | - | ±20 | V |
| ID | drain current (DC) N-channel P-channel |
Ts 80 note 1 | - - |
6.4 -4 |
A A |
| IDM | peak drain current N-channel P-channel |
note 2 | - - |
25 -1 |
A A |
| Ptot | total power dissipation | Ts = 80 ; note 3 | - | 3.5 | W |
| Tamb = 25 ; note 4 | - | 2.6 | W | ||
| Tamb = 25 ; note 5 | - | 1.1 | W | ||
| Tamb = 25 ; note 6 | - | 1.5 | W | ||
| Tstg | storage temperature | -55 | +150 | ||
| Tj | operating junction temperature | -55 | 150 | ||
| Source-drain diode | |||||
| IS | source current (DC) N-channel P-channel |
Ts 80 | - - |
3.5 -2.6 |
A A |
| ISM | peak pulsed source current N-channel P-channel |
note 2 | - - |
14 -10 |
A A |

