RFM3N45, RFM3N50, RFM4N35 Selling Leads, Datasheet
MFG:MOT/ON Package Cooled:01+ D/C:07+
RFM3N45, RFM3N50, RFM4N35 Datasheet download
Part Number: RFM3N45
MFG: MOT/ON
Package Cooled: 01+
D/C: 07+
RFM3N45, RFM3N50, RFM4N35
- Table of contents:
Info of RFM3N45
Info of RFM3N50
Info of RFM4N35
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About RFM3N45
PDF/DataSheet Download
Datasheet: RFM3N45
File Size: 83910 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFM3N50
PDF/DataSheet Download
Datasheet: RFM3N50
File Size: 83910 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFM4N35
PDF/DataSheet Download
Datasheet: RFM4N35
File Size: 39459 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RFM3N45 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFM3N45 Maximum Ratings
| RFM3N45 | RFM3N50 | RFP3N45 | RFP3N50 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 450 | 200 | 500 | 500 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 450 | 200 | 500 | 500 | V |
| Continuous Drain Current ID | 3 | 3 | 3 | 3 | A |
| Pulsed Drain Current (Note 3) IDM | 30 | 30 | 30 | 30 | A |
| Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 75 | 75 | 60 | 60 | W |
| Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.8 | 0.8 | 0.8 | 0.8 | W/oC |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
| Maximum Temperature for Soldering | |||||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | 260 | 260 | o C |
RFM3N45 Features
• 3A, 450V and 500V
• rDS(ON) = 3W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 3W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFM3N50 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFM3N50 Maximum Ratings
| RFM3N45 | RFM3N50 | RFP3N45 | RFP3N50 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 450 | 200 | 500 | 500 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 450 | 200 | 500 | 500 | V |
| Continuous Drain Current ID | 3 | 3 | 3 | 3 | A |
| Pulsed Drain Current (Note 3) IDM | 30 | 30 | 30 | 30 | A |
| Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 75 | 75 | 60 | 60 | W |
| Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.8 | 0.8 | 0.8 | 0.8 | W/oC |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
| Maximum Temperature for Soldering | |||||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | 260 | 260 | o C |
RFM3N50 Features
• 3A, 450V and 500V
• rDS(ON) = 3W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 3W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFM4N35 Maximum Ratings
| RFM7N35 | RFM7N40 | RFP7N35 | RFP7N40 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 350 | 400 | 350 | 400 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 350 | 400 | 350 | 400 | V |
| Continuous Drain Current ID | 4 | 4 | 4 | 4 | A |
| Pulsed Drain Current (Note 3) IDM | 8 | 8 | 8 | 8 | A |
| Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 100 | 100 | 100 | 100 | W |
| Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.6 | 0.6 | 0.6 | 0.6 | W/oC |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
| Maximum Temperature for Soldering | |||||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | 260 | 260 | o C |
RFM4N35 Features
• 4A, 350V and 400V
• rDS(ON) = 2.000W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 2.000W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
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