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Index 2 : 2SC2235,2SC2233,2SC1881K,
2SC2235
Vendor:Other Category:Other
2SC2233
Vendor:Other Category:Other
The 2SC2233 features: ·Collector-Emitter Breakdown Voltage-:VCEO= 60V(Min)·DC Current Gain-: hFE= 30(Min)@ (VCE= 5V, IC= 1A)·High Collector Current·High Collector Power Dissipation2SC2230
Vendor:Other Category:Other
Features of the 2SC2230 are:(1)hig voltage:VCEO=180V;(2)high DC current gain. The absolute maximum ratings of the 2SC2230 can be summarized as:(1):the characteristic is collector-base voltage,the symbol is VCBO,the rati...2SC223
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
The 2SC223 features: ·With TO-220 package·Complement to type 2SA968·High breakdown votage2SC2229
Vendor:Other Category:Other
2SC2223
Vendor:Other Category:Other
2SC2216
Vendor:Other Category:Other
Features of the 2SC2216 are:(1)hig gain:Gpe=33dB(Typ.)(f=45MHz);(2)good linearity of hFE. The absolute maximum ratings of the 2SC2216 can be summarized as:(1):the characteristic is collector-base voltage,the symbol is V...2SC2209
Vendor:Other Category:Other
2SC2206
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SC2189
Vendor:Other Category:Other
The 2SC2189 features: `Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V (Min)`Wide Area of Safe Operation2SC2188
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SC2178
Vendor:Other Category:Other
2SC2178 is a kind of silicon NPN epitaxial planar type.It is widely used in the VHF band power amplifier.Here you can some information about the features.First,the minimum output power (PO) is 15 W (f=175 MHz,VCC=1...2SC2167
Vendor:Other Category:Other
The 2SC2167 features: `With TO-220 package`High collector-emitter breakdown voltage : VCEO=150V(min)2SC2151
Vendor:Other Category:Other
The 2SC2151 features: ·With TO-3 package·High voltage ,high speed2SC2149
Mfg:N/A Pack:N/A D/C:09+ Vendor:Other Category:Other
The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, "micro X". These are designed for small signal amplifier, low noise amplifier, and oscillator applications in t...2SC2148
Mfg:N/A Pack:N/A D/C:09+ Vendor:Other Category:Other
The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, "micro X". These are designed for small signal amplifier, low noise amplifier, and oscillator applications in t...2SC2140
Vendor:Other Category:Other
The 2SC2140 features: `High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V (Min)`High Switching Speed2SC2139A
Vendor:Other Category:Other
The 2SC2139A is designed as silicon NPN power transistors with typical applications of switching regulator applications and high speed DC-DC converter applications.2SC2139A has two features.The first one is that it would...2SC2139
Vendor:Other Category:Other
The 2SC2139 features: ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min)·High Switching Speed2SC2137
Vendor:Other Category:Other
The 2SC2137 features: ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min)·High Switching Speed2SC2131
Vendor:Other Category:Other
The 2SC2131 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications and driver amplifiers in general. There are some features of 2SC2131 as follows: (1)hi...2SC2123
Vendor:Other Category:Other
The 2SC2123 features: ·With TO-3 package ·Short switching times. ·High dielectric strength2SC2122
Vendor:Other Category:Other
The 2SC2122 features: ·With TO-3 package ·Short switching times. ·High dielectric strength2SC2120
Vendor:Other Category:Other
2SC2099
Vendor:Other Category:Other
The 2SC2099 is a transistor ,silicon npn epitaxial planar type. Features of the 2SC2099 are:(1)spacified 12.5V,28MHz characteristics; (2)output power:Po=20Wpep(Min.); (3)power gain:Gp=12dB(Min.); (4)collector efficiency...2SC2098
Vendor:Other Category:Other
The 2SC2098 is designed for 25~50MHz RF power amplifier applications. Features of the 2SC2098 are:(1)RF power output 13W MIN,f=28MHz,Vcc=12V,high power gain 11db min; (2)recommended for 12W PEP SSB citizer band transcei...2SC2097
Vendor:Other Category:Other
The 2SC2097 is a silicon npn epotaxial planar type transistor designed for rf power amplifiers in hf band mobile radio applications. Features of the 2SC2097 are:(1)high power gain:Gpe12.3db @Vcc=13.5,Po=75W,f=30MHz; (2)...2SC2094
Vendor:Other Category:Other
The 2SC2094 is a silicon npn epotaxial planar type transistor designed for rf power amplifiers in vhf band mobile radio applications. Features of the 2SC2094 are:(1)high power gain:Gpe8.8db @Vcc=13.5,Po=15W,f=175MHz; (2...2SC2092
Vendor:Other Category:Other
The 2SC2091 is a silicon npn epotaxial ,high frequency power amplifier. The absolute maximum ratings of the 2SC2091 can be summarized as:(1)collector to base voltage:75V; (2)emitter to base voltage:75V; (3)collector to ...2SC2091
Vendor:Other Category:Other
The 2SC2091 is a silicon npn epotaxial ,high frequency power amplifier. The absolute maximum ratings of the 2SC2091 can be summarized as:(1)collector to base voltage:75V; (2)emitter to base voltage:4V; (3)collector to e...2SC2086
Vendor:Other Category:Other
The 2SC2086 is a silicon npn epotaxial planar type transistor designed for rf power amplifers in hf band mobile radio applications. Features of the 2SC2086 are:(1)high power gain:Gpe13db @Vcc=12V,Po=0.3W,f=27MHz; (2)emi...2SC2085
Vendor:Other Category:Other
The 2SC2085 features: ·With TO-220 package·High breakdown voltage·High transition frequency2SC2078
Vendor:Other Category:Other
The 2SC2078 features: ·Collector-Emitter Voltage- :VCER= 75V(Min) ;RBE =150·Collector Current- :IC=3A2SC2076
Vendor:Other Category:Other
The 2SC2076 is a si npn epitaxial planar. Features of the 2SC2076 are:(1)suitable for RF amp,OSC,mix. amd IF amp. in FM/AM radios; (2)large with standing capability against sarge voltage. The absolute maximum ratings o...2SC2075
Vendor:Other Category:Other
The 2SC2075 features: ·With TO-220 package·High transition frequency·Wide area of safe operation2SC2073-CH
Vendor:Other Category:Other
The 2SC2073-CH is one member of the 2SC2073 family which is designed as the NPN silicon power transistor that can be used in general purpose power amplifier, vertical output applications. Features of the 2SC2073-CH are:(...2SC2073
Vendor:Other Category:Other
The 2SC2073 features: `Collector-Emitter Breakdown Voltage-:V(BR)CEO= 150V(Min)`Wide Area of Safe Operation`Complement to Type 2SA9402SC2068
Vendor:Other Category:Other
The 2SC2068 is designed as the NPN silicon power transistor that can be used in general purpose power amplifier, vertical output applications. Features of the 2SC2068 are:(1)collector-emitter voltage: VCEO = 300 V (min);...2SC2062S
Vendor:Other Category:Other
The 2SC2062S is designed as the high-gain amplifier transistor (32 V, 0.3 A) that has two points of features:(1)darlington connection for a high hFE (DC current gain = 5000 (min.) at VCE = 3 V, Ic=0.1 A);(2)high input im...2SC2060
Mfg:ROHM Pack:TO-92 D/C:07+ Vendor:Other Category:Other
2SC2058S
Mfg:5000 Pack:ROHM Vendor:Other Category:Other
2SC2056
Vendor:Other Category:Other
The 2SC2056 is a silicon npn epitaxial planar type transistor designed for rf power amplifiers on vhf band portable or hand-held radio applications.Features of the 2SC2056 are:(1)high power gain:Gpe9dB @Vcc=7.2V,Po=1.6W,...2SC2055
Vendor:Other Category:Other
The 2SC2055 is a silicon npn epitaxial planar type transistor designed for rf amplifiers on vhf band mobile radio applications.Features of the 2SC2055 are:(1)high power gain:Gpe13dB @Vcc=7.2V,Po=0.2W,f=175MHz; (2)emitter...2SC2053
Vendor:Other Category:Other
The 2SC2053 is a silicon npn epitaxial planar type transistor designed for rf amplifiers on vhf band mobile radio applications.Features of the 2SC2053 are:(1)high power gain:Gpe15.7dB @Vcc=13.5V,Po=0.15W,f=175MHz; (2)emi...2SC2043
Vendor:Other Category:Other
The 2SC2043 is an npn epitaxial planar type silicon transistor and is designed for use in output stage of 27MHz-citizen band ssb tranceiver application.Features of the 2SC2043 are:(1)power output 12 watts.; (2)power gain...2SC2034
Vendor:Other Category:Other
The 2SC2034 is designed as the high-gain amplifier transistor (32 V, 0.3 A) that has two points of features:(1)darlington connection for a high hFE (DC current gain = 5000 (min.) at VCE = 3 V, Ic=0.1 A);(2)high input imp...2SC2027
Vendor:Other Category:Other
The 2SC2027 features: `With TO-3 package`High voltage ,high speed2SC2026Y
Vendor:Other Category:Other
The 2SC2026Y is designed as one kind of NPN silicon transistor that is suitable for low noise amplifier in the VHF to UHF band. This device has three points of features:(1)NF 3.0 dB typ. @ f=500 MHz;(2)Gpe 15 dB typ. @ f...2SC2026
Vendor:Other Category:Other
The 2SC2026 features: ·Low Noise NF= 3.0dB TYP. @ f= 500MHz·High Power Gain Gpe= 15dB TYP. @ f= 500MHz·High Gain Bandwidth Product fT= 2.0GHz TYP.2SC2023
Vendor:Other Category:Other
2SC2022
Vendor:Other Category:Other
The 2SC2022 features: ·With TO-220C package·High voltage2SC2021
Vendor:Other Category:Other
The 2SC2021 is designed as one kind of exitaxial planar NPN silicon transistor that is suitable for low noise amplifier in the VHF to UHF band. This device has four points of features:(1)low collector saturation voltage:...2SC2020
Vendor:Other Category:Other
The 2SC2020 is designed as one kind of exitaxial planar NPN silicon transistor that is suitable for low noise amplifier in the VHF to UHF band. This device has four points of features:(1)high power gain: 14 dB min;(2)goo...2SC2003
Vendor:Other Category:Other
The 2SC2003 is designed for use in driver stage of high voltage audio equipments. Features of the 2SC2003 are:(1)high total power dissipation,PT:600mW;(2)high hFE and high voltage, hFE(IC=50mA):200 TYP,VCEO:80V. The ab...2SC2002
Vendor:Other Category:Other
The 2SC2002 is designed for use in driver stage of high voltage audio equipments. Features of the 2SC2002 are:(1)high total power dissipation,PT:600mW;(2)high hFE and high voltage, hFE(IC=500mA):200 TYP,VCEO:60V. The a...2SC2001
Vendor:Other Category:Other
The 2SC2001 is designed for use in output stage of portable RADIO and cassette type tape recorder,general purpose applications. Features of the 2SC2001 are:(1)high total power dissipation,PT:600mW;(2)high hFE and low VC...2SC2000
Vendor:Other Category:Other
The 2SC2000 is designed for use in AM/RF stage of CAR RADIO and general purpose applications. Features of the 2SC2000 are:(1)high electrostatic-dischange-resistance(E-B reverse bias) ESDR 1:TYP.500V(C=1000 pF),ESDR 2:TY...2SC1986
Vendor:Other Category:Other
The 2SC1986 features: ·With TO-220 package·Complement to type 2SA770/771·Low collector saturation voltage2SC1985
Vendor:Other Category:Other
The 2SC1985 is a silicon npn triple diffused mesa.Features of the 2SC1985 are:(1)outline drawing 1:MT-25(TO220); (2)test circuit. The absolute maximum ratings of the 2SC1985 can be summarized as:(1)VCBO:80V; (2)VCEO:60V...2SC1983
Mfg:SK Pack:TO220-3 D/C:95+ Vendor:Other Category:Other
2SC1980
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SC1975
Vendor:Other Category:Other
The 2SC1975 is a si npn epitaxial planar,transceiver power output.Features of the 2SC1975 are:(1)withstands worst overload conditions; (2)Vcbo=120V. The absolute maximum ratings of the 2SC1975 can be summarized as:(1)VC...2SC1974
Vendor:Other Category:Other
The 2SC1974 is a si npn epitaxial planar,rf amplifier and driver.Features of the 2SC1974 are:(1)high gain; (2)PO=5W; (3)withstands worst overload conditions. The absolute maximum ratings of the 2SC1974 can be summarized...2SC1973
Vendor:Other Category:Other
The 2SC1973 is a si npn epitaxial planar,rf amplifier and driver.Features of the 2SC1973 are:(1)high gain; (2)high fT; (3)low Cob. The absolute maximum ratings of the 2SC1973 can be summarized as:(1)VCBO:55V; (2)VCER:45...2SC1972
Vendor:Other Category:Other
The 2SC1972 is a silicon npn epitaxial planar type transistor designed for rf power amplifiers on UHF band mobile radio applications.Features of the 2SC1972 are:(1)high power gain:Gpe7.5dB @Vcc=13.5V,Po=14W,f=175MHz; (2)...2SC1971
Vendor:Other Category:Other
The 2SC1971 features: `High Power Gain-: Gpe 10dB,f= 175MHz, PO= 6W; VCC= 13.5V`High Reliability2SC1970
Vendor:Other Category:Other
The 2SC1970 features: `High Power Gain-: Gpe 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V`High Reliability2SC1969
Vendor:Other Category:Other
The 2SC1969 features: `High Power Gain- : Gpe12dB,f= 27MHz, PO= 16W`High Reliability2SC1968
Vendor:Other Category:Other
The 2SC1968 is a silicon npn epitaxial planar type transistor designed for rf power amplifiers on UHF band mobile radio applications.Features of the 2SC1968 are:(1)high power gain:Gpe3.7dB @Vcc=13.5V,Po=14W,f=470MHz; (2)...2SC1967
Vendor:Other Category:Other
The 2SC1967 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on UHF band mobile radio applications. Features of the 2SC1967 are:(1)high power gain:Gpe6.7dB @ VCC=13.5V,Po=7W,f=470MHz;(2...2SC1966
Vendor:Other Category:Other
The 2SC1966 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on UHF band mobile radio applications. Features of the 2SC1966 are:(1)high power gain:Gpe7.8dB @ VCC=13.5V,Po=3W,f=470MHz;(2...2SC1959
Mfg:TOS Vendor:Other Category:Other
2SC1953
Vendor:Other Category:Other
The 2SC1953 features: ·With TO-126 package·Complement to type 2SA914·High VCEO2SC1947
Vendor:Other Category:Other
The 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. Features of the 2SC1947 are:(1)high power gain:Gpe10.7dB @ VCC=13.5V,P...2SC1946A
Vendor:Other Category:Other
The 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features of the 2SC1946A are:(1)high power gain:Gpe10dB @ VCC=13.5V,Po=30W,f=175MHz;...2SC1946
Vendor:Other Category:Other
The 2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features of the 2SC1946 are:(1)high power gain:Gpe6.7dB @ VCC=13.5V,Po=28W,f=175MHz;(...2SC1945
Vendor:Other Category:Other
The 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. Features of the 2SC1945 are:(1)high power gain:Gpe14.5dB @ VCC=12V,Po=14W,f=27MHz;(2)e...2SC1944
Vendor:Other Category:Other
The 2SC1944 is designed as one kind of exitaxial planar NPN silicon transistor that is suitable for low noise amplifier in the VHF to UHF band. This device has four points of features:(1)high power gain: Gpe>/= 11 dB ...2SC1942N
Vendor:Other Category:Other
The 2SC1942N is designed as one kind of exitaxial planar NPN silicon transistor that is suitable for low noise amplifier in the VHF to UHF band. This device has four points of features:(1)high power gain: Gpe>/= 11 dB...2SC1942
Vendor:Other Category:Other
2SC1941
Vendor:Other Category:Other
The 2SC1941 is designed as one kind of exitaxial planar NPN silicon transistor that is suitable for low noise amplifier in the VHF to UHF band. This device has two points of features:(1)high total power dissipation and h...2SC1940
Vendor:Other Category:Other
The 2SC1940 is designed as one kind of exitaxial planar NPN silicon transistor that is suitable for low noise amplifier in the VHF to UHF band. This device has two points of features:(1)high total power dissipation and h...2SC1929
Vendor:Other Category:Other
2SC1927
Mfg:5000 Pack:NEC Vendor:Other Category:Other
The 2SC1927 is an NPN silicon epitaxial dual transistor that consists of two chips equivalent to the 2SC1275, and is designed for differential amplifier and ultra-high-speed switching applications.2SC1923
Vendor:Other Category:Other
The 2SC1923 is designed as one kind of silicon NPN epitaxial planar type (PCT process) that can be used in high frequency amplifier and FM, RF, MIX, IF amplifier applications. And the two points of features of this devic...2SC1922
Vendor:Other Category:Other
2SC1921
Mfg:HIT Pack:TO-92 D/C:05+ Vendor:Other Category:Other
2SC1913A
Vendor:Other Category:Other
2SC1913
Vendor:Other Category:Other
2SC1907
Vendor:Other Category:Other
2SC1906
Vendor:Other Category:Other
2SC1905
Vendor:Other Category:Other
The 2SC1905 features: ·With TO-220C package·High breakdown voltage·Large collector power dissipation2SC1904
Vendor:Other Category:Other
The 2SC1904 features: `With TO-126 package`Complement to type 2SA8992SC1895
Vendor:Other Category:Other
The 2SC1895 features: ·With TO-3 package·High breakdown voltage·Low collector saturation voltage2SC1894
Vendor:Other Category:Other
2SC1893
Vendor:Other Category:Other
The 2SC1893 features: `With TO-3 package`High breakdown voltage2SC1890AETZ
Vendor:Other Category:Other
The 2SC1890AETZ is one of the 2SC1890 series.The 2SC1890AETZ is a silicon npn epitaxial. Features of the 2SC1890AETZ are:(1)Low frequency high voltage amplifier; (2)Complementary pair with 2SA893/A. The absolute maximu...2SC1890A
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
2SC1890
Pack:TO92 Vendor:Other Category:Other
2SC1881K
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other