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Position: Home > SiteMap > Index 2 > Page 232

Index 2 : 2SB1203,2SB1202,2SB1119-S(BB/S2N),

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  • 2SB1203

    Mfg:SANYO    Pack:TO-252    D/C:02+    Vendor:Other    Category:Other    

  • 2SB1202

    Vendor:Other    Category:Other    

  • 2SB1201

    Vendor:Other    Category:Other    

  • 2SB1198K

    Vendor:Other    Category:Other    
    The 2SB1198K is designed as one kind of low-frequency transistor device that has some points of features:(1)Low VCE(sat). VCE(sat) = -0.20 V (typ.) (IC / IB = -0.5 A / -50 mA);(2)High breakdown voltage BVCEO = -80 V;(3)C...

  • 2SB1197-P

    Vendor:Other    Category:Other    

  • 2SB1197KT146R

    Vendor:Rohm Semiconductor    Category:Discrete Semiconductor Products    
    TRANS PNP 32V 0.8A SOT-346The 2SB1197KT146R is one member of the 2SB1197 family which is designed as one kind of low-frequency transistor device that has some points of features:(1)High current capacity in compact package Ic = -0.8A;(2)Epitaxial ...

  • 2SB1197KRLT1G

    Vendor:Other    Category:Other    
    The 2SB1197KRLT1G is one member of the 2SB1197 family which is designed as one kind of low-frequency transistor device that has some points of features:(1)High current capacity in compact package Ic = -0.8A;(2)Epitaxial ...

  • 2SB1197KQLT1G

    Vendor:Other    Category:Other    
    The 2SB1197KQLT1G is one member of the 2SB1197 family which is designed as one kind of low-frequency transistor device that has some points of features:(1)High current capacity in compact package Ic = -0.8A;(2)Epitaxial ...

  • 2SB1197K T146 R

    Vendor:Other    Category:Other    
    The 2SB1197KT146R is one member of the 2SB1197 family which is designed as one kind of low-frequency transistor device that has some points of features:(1)High current capacity in compact package Ic = -0.8A;(2)Epitaxial ...

  • 2SB1197K R

    Vendor:Other    Category:Other    
    The 2SB1197KR is one member of the 2SB1197 family which is designed as one kind of low-frequency transistor device that has some points of features:(1)High current capacity in compact package Ic = -0.8A;(2)Epitaxial plan...

  • 2SB1197K

    Vendor:Other    Category:Other    

  • 2SB1197

    Mfg:5000    Pack:ROHM    Vendor:Other    Category:Other    

  • 2SB1194

    Vendor:Other    Category:Other    
    The 2SB1194 features: ·With TO-220Fa package ·High DC current gain ·High speed switching ·DARLINGTON ·Complement to type 2SD1633

  • 2SB1193

    Vendor:Other    Category:Other    

  • 2SB1192

    Vendor:Other    Category:Other    
    The 2SB1192 features: ·With TO-220Fa package·High VCEO·Large PC·Complement to type 2SD1770

  • 2SB1190

    Vendor:Other    Category:Other    
    The 2SB1190 features: ·With TO-220 package·High VCEO·Large PC·Complement to type 2SD1772

  • 2SB1189

    Vendor:Other    Category:Other    
    The 2SB1189 is designed as one kind of medium power transistor (-80 V, -0.7 A)_device that has some points of features:(1)high breakdown voltage, BVECO= -80 V, and high current, -0.7 A;(2)complements the 2SD1767 / 2SD185...

  • 2SB1188 T1000

    Vendor:Other    Category:Other    
    The 2SB1188-T1000 is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / -0.2A);(2)complements the 2SD1766 / 2SD1...

  • 2SB1188

    Vendor:Other    Category:Other    
    The 2SB1188 is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / -0.2A);(2)complements the 2SD1766 / 2SD1758 / ...

  • 2SB1187

    Vendor:Other    Category:Other    
    The 2SB1187 features: ·With TO-220Fa package·Low saturation voltage·Complement to type 2SD1761·Excellent DC current gain characteristics·Wide safe operating area

  • 2SB1186A

    Vendor:Other    Category:Other    
    The 2SB1186A is one member of the 2SB1186 family which is designed as the silicon PNP power transistor device that has four points of features:(1)With TO-220Fa package; (2)Low collector saturation votlage; (3)Complement ...

  • 2SB1186

    Vendor:Other    Category:Other    
    The 2SB1186 is designed as one kind of power transistor (-120 V, -1.5 A) that has four points of features:(1)high breakdown voltage (BVCEO= -120 V);(2)low collector output capacitance (typ. 30pF at VCB= -10 V);(3)high tr...

  • 2SB1185

    Vendor:Other    Category:Other    
    The 2SB1185 features: ·With TO-220Fa package·Low collector saturation votlage·Complement to type 2SD1762

  • 2SB1184TLR

    Vendor:Rohm Semiconductor    Category:Discrete Semiconductor Products    
    TRANS PNP 50V 3A SOT-428The 2SB1184TLR is one member of the 2SB1184 family which is designed as the power transistor that has two points of features:(1)low VCE(sat): VCE(sat) = -0.5V (typ.) (IC/IB = -2A / -0.2A) ; (2)complements the 2SD1760 / 2...

  • 2SB1184

    Vendor:Other    Category:Other    
    The 2SB1184 is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / -0.2A);(2)complements the 2SD1760 / 2SD1864. ...

  • 2SB1183

    Mfg:ROHM    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    

  • 2SB1182TLQ

    Vendor:Rohm Semiconductor(VA)    Category:Discrete Semiconductor Products    
    TRANSISTOR PNP 32V 2A SOT-428The 2SB1182TLQ is one member of the 2SB1182 family which is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / -...

  • 2SB1182 TLQ

    Vendor:Other    Category:Other    
    The 2SB1182-TLQ is one member of the 2SB1182 family which is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / ...

  • 2SB1182

    Vendor:Other    Category:Other    
    The 2SB1182 is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / -0.2A);(2)complements the 2SD1766 / 2SD1758 / ...

  • 2SB1181

    Mfg:ROHM    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    

  • 2SB1180A

    Mfg:5000    Pack:Panasonic    Vendor:Other    Category:Other    

  • 2SB1180

    Mfg:5000    Pack:Panasonic    Vendor:Other    Category:Other    

  • 2SB1179A

    Mfg:5000    Pack:Panasonic    Vendor:Other    Category:Other    

  • 2SB1179

    Mfg:5000    Pack:Panasonic    Vendor:Other    Category:Other    

  • 2SB1176

    Mfg:PAN    Pack:SOT-252    Vendor:Other    Category:Other    

  • 2SB1175

    Mfg:5000    Pack:Panasonic    Vendor:Other    Category:Other    

  • 2SB1174

    Mfg:5000    Pack:Panasonic    Vendor:Other    Category:Other    

  • 2SB1173

    Vendor:Other    Category:Other    
    The 2SB1173 is designed as one kind of AF power amplifier that has three points of features:(1)high DC current gain and good linearity;(2)low collector emitter saturation voltage;(3)"I type" package configuration with a ...

  • 2SB1172A

    Mfg:5000    Pack:Panasonic    Vendor:Other    Category:Other    

  • 2SB1172

    Mfg:5000    Pack:Panasonic    Vendor:Other    Category:Other    

  • 2SB1169A

    Mfg:5000    Pack:Panasonic    Vendor:Other    Category:Other    

  • 2SB1169

    Mfg:5000    Pack:Panasonic    Vendor:Other    Category:Other    

  • 2SB1168

    Vendor:Other    Category:Other    

  • 2SB1167T

    Vendor:Other    Category:Other    
    The 2SB1167T is one of the 2SB1167 series.The 2SB1167T is a pnp/npn epitaxial planar silicon transistors,100V/3A switching applications.Features of the 2SB1167T are:(1)low collector-to-emitter saturation voltage; (2)high...

  • 2SB1167

    Vendor:Other    Category:Other    

  • 2SB1166

    Vendor:Other    Category:Other    

  • 2SB1165

    Vendor:Other    Category:Other    

  • 2SB1163

    Vendor:Other    Category:Other    
    The 2SB1163 features: ·With TO-3PL package ·Complement to type 2SD1718 ·Excellent linearity of hFE·Wide area of safe operation (ASO)·High transition frequency fT

  • 2SB1162

    Vendor:Other    Category:Other    
    ·2SB1162 is with TO-3PL package ·Complement to type 2SD1717 ·Excellent linearity of hFE·Wide area of safe operation (ASO)·High transition frequency fT

  • 2SB1161

    Vendor:Other    Category:Other    
    ·2SB1161 is with TO-3PFa package ·Complement to type 2SD1716 ·High fT ·Wide area of safe operation

  • 2SB1160

    Vendor:Other    Category:Other    
    The 2SB1160 features: ·With TO-3PFa package·Complement to type 2SD1715·High fT·Satisfactory linearity of hFE·Wide area of safe operation

  • 2SB1159

    Vendor:Other    Category:Other    
    The 2SB1159 features: ·With TO-3PFa package ·Complement to type 2SD1714 ·High fT ·Wide area of safe operation

  • 2SB1158

    Vendor:Other    Category:Other    
    The 2SB1158 features: ·With TO-3PFa package ·Complement to type 2SD1713 ·High fT ·Wide area of safe operation

  • 2SB1157

    Vendor:Other    Category:Other    
    The 2SB1157 features: ·With TO-3PFa package ·Complement to type 2SD1712 ·High fT ·Wide area of safe operation

  • 2SB1156

    Vendor:Other    Category:Other    

  • 2SB1155

    Vendor:Other    Category:Other    
    ·2SB1155 is with TO-3PFa package·Complement to type 2SD1706·Low collector saturation voltage·Satisfactory linearity of hFE

  • 2SB1154

    Vendor:Other    Category:Other    

  • 2SB1151

    Vendor:Other    Category:Other    

  • 2SB1150

    Vendor:Other    Category:Other    
    The 2SB1150 is a darlington transistor built-in a zener diode at B-C and a dumper diode at E-C.It is suitable for use to operate from IC without predriver,such as hammer driver. Features of the 2SB1150 are:(1)high DC cu...

  • 2SB1149L

    Vendor:Other    Category:Other    
    The 2SB1149L is one of the 2SB1149 series.The 2SB1149L is a darlington transistor built-in dumper diode at E-C.It is suitable for use to operate from IC without predriver,such as hammer driver. Features of the 2SB1149L ...

  • 2SB1149

    Vendor:Other    Category:Other    
    ·2SB1149 is with TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage

  • 2SB1148A

    Mfg:5000    Pack:Panasonic    Vendor:Other    Category:Other    

  • 2SB1148

    Mfg:5000    Pack:Panasonic    Vendor:Other    Category:Other    

  • 2SB1145

    Vendor:Other    Category:Other    
    The 2SB1145 features: ·With TO-220F package·High DC current gain.·DARLINGTON·Low collector saturation voltage

  • 2SB1144S

    Vendor:Other    Category:Other    
    The 2SB1144S is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 100 V / 1.5 A switching applications. Features of the 2SB1144S are:(1)adoption of FBET and MBIT processes;(2)high ...

  • 2SB1144

    Mfg:5000    Pack:SANYO    Vendor:Other    Category:Other    

  • 2SB1143S

    Vendor:Other    Category:Other    
    The 2SB1143S is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 50 V / 4 A switching applications. Features of the 2SB1144S are:(1)adoption of FBET and MBIT processes;(2)high bre...

  • 2SB1143

    Vendor:Other    Category:Other    

  • 2SB1142S

    Vendor:Other    Category:Other    
    The 2SB1142S is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 50 V / 2.5 A high speed switching applications. Features of the 2SB1142S are:(1)adoption of FBET and MBIT processe...

  • 2SB1142

    Vendor:Other    Category:Other    

  • 2SB1141-T

    Vendor:Other    Category:Other    
    The 2SB1141-T is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 18 V / 1.2 A high speed switching applications. Features of the 2SB1141-T are:(1)adoption of FBET and MBIT proces...

  • 2SB1141

    Mfg:5000    Pack:SANYO    Vendor:Other    Category:Other    

  • 2SB1140

    Vendor:Other    Category:Other    
    The 2SB1140 is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 18 V / 1.2 A high speed switching applications. Features of the 2SB1140 are:(1)adoption of FBET and MBIT processes;...

  • 2SB1136

    Vendor:Other    Category:Other    

  • 2SB1135R

    Vendor:Other    Category:Other    
    The 2SB1135R is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 50 V / 7 A high speed switching applications. Features of the 2SB1135R are:(1)low saturation collector-to-emitter ...

  • 2SB1135

    Vendor:Other    Category:Other    

  • 2SB1134R

    Vendor:Other    Category:Other    
    The 2SB1134R is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 50 V / 7 A high speed switching applications. Features of the 2SB1134R are:(1)low saturation collector-to-emitter ...

  • 2SB1134

    Vendor:Other    Category:Other    

  • 2SB1133

    Vendor:Other    Category:Other    

  • 2SB1132-x-AB3-R

    Vendor:Other    Category:Other    
    The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.

  • 2SB1132T100Q

    Vendor:Rohm Semiconductor(VA)    Category:Discrete Semiconductor Products    
    TRANSISTOR PNP 32V 1A SO-89The 2SB1182 is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664 / 2SD18...

  • 2SB1132 T100 R

    Vendor:Other    Category:Other    
    The 2SB1132-T100R is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664 /...

  • 2SB1132 T100 Q

    Vendor:Other    Category:Other    
    The 2SB1132 T100 Q is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664 ...

  • 2SB1132 R

    Vendor:Other    Category:Other    
    The 2SB1132R is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664 / 2SD1...

  • 2SB1132 Q

    Vendor:Other    Category:Other    
    The 2SB1132Q is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664 / 2SD1...

  • 2SB1132 FD5T100R

    Vendor:Other    Category:Other    
    The 2SB1132FD5T100R is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664...

  • 2SB1132

    Vendor:Other    Category:Other    
    The 2SB1132 is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664 / 2SD18...

  • 2SB1131

    Vendor:Other    Category:Other    
    The feature of 2SB1131 are as follows: (1)adoption of FBET, MBIT processes; (2)low saturation voltage; (3)large current capacity; (4)fast switching time. The absolute maximum ratings of the 2SB1131 are: (1)collector to ...

  • 2SB1127

    Vendor:Other    Category:Other    
    The 2SB1127 is a pnp epitaxial planar silicon transistors,20V/5A switching applications. Features of the 2SB1127 are:(1)adoption of FBET,MBIT processes; (2)low saturation voltage; (3)large current capacity ; (4)fast swi...

  • 2SB1126

    Vendor:Other    Category:Other    

  • 2SB1125

    Vendor:Other    Category:Other    
    Features of the 2SB1125 are:(1)high DC current gain;(2)large current capacity and wide ASO;(3)very small size making it easy to provide high-desity,small-sized hybrid ICs. The absolute maximum ratings of the 2SB1125 can...

  • 2SB1124S

    Vendor:Other    Category:Other    
    The 2SB1124S is one of the 2SB1124 series.The 2SB1124S is a pnp/npn epitaxial planar silicon transistors,high-current switching applications. Features of the 2SB1124S are:(1)adoption of FBET,MBIT processes; (2)low sat...

  • 2SB1124

    Mfg:N/A    Pack:NA/    D/C:09+    Vendor:Other    Category:Other    

  • 2SB1123

    Vendor:Other    Category:Other    
    The 2SB1123 is designed as one kind of PNP / NPN epitaxial planar silicon transistor device that has some points of features:(1)adoption of FBET, MBIT processes;(2)low collector-to-emitter saturation voltage;(3)large cur...

  • 2SB1122

    Vendor:Other    Category:Other    

  • 2SB1121S-TD-E

    Vendor:Other    Category:Other    
    The 2SB1121S-TD-E is designed as one kind of PNP / NPN epitaxial planar silicon transistor device that has some points of features:(1)adoption of FBET, MBIT processes;(2)low collector-to-emitter saturation voltage;(3)lar...

  • 2SB1121S

    Vendor:Other    Category:Other    
    The 2SB1121S is one of the 2SB1121 series.The 2SB1121S is a pnp/npn epitaxial planar silicon transistors,high-current switching applications. Features of the 2SB1121S are:(1)adoption of FBET,MBIT processes; (2)low s...

  • 2SB1121

    Vendor:Other    Category:Other    

  • 2SB1120

    Vendor:Other    Category:Other    

  • 2SB1119-S(BB/S2N)

    Vendor:Other    Category:Other    
    The 2SB1119-S(BB/S2N) is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in LF amp, electronic governor applications. Features of this device is: very small size making it easy to p...