BLU99, BLU99/SL, BLV10 Selling Leads, Datasheet
MFG:PHILIPS D/C:08+/09+
BLU99, BLU99/SL, BLV10 Datasheet download
Part Number: BLU99
MFG: PHILIPS
Package Cooled:
D/C: 08+/09+
BLU99, BLU99/SL, BLV10
- Table of contents:
Info of BLU99
Info of BLU99/SL
Info of BLV10
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About BLU99
PDF/DataSheet Download
Datasheet: BLU99
File Size: 113567 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLU99/SL
PDF/DataSheet Download
Datasheet: BLU99/SL
File Size: 113567 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV10
PDF/DataSheet Download
Datasheet: BLV10
File Size: 83514 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLU99 General Description
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.
BLU99 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCBOM | max. | 36v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 16v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 3v | ||
| Collector current | |||||
| d.c. or average | IC | max. | 0.8 A | ||
| (peak value); f > 1 MHz | ICM | max. | 2.5 A | ||
| D.C. power dissipation up to Tmb =50 °C | Ptot (d.c.) max. 12,5 W | ||||
| R.F. power dissipation | |||||
| f > 1 MHz; Tmb = 25 °C | Ptot (r.f.) | max. | 19 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLU99 Features
* multi-base structure and diffused emitter-ballasting resistors for an optimum temperature profile;
* gold metallization ensures excellent reliability.
* gold metallization ensures excellent reliability.
BLU99 Connection Diagram
BLU99/SL General Description
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.
BLU99/SL Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCBOM | max. | 36v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 16v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 3v | ||
| Collector current | |||||
| d.c. or average | IC | max. | 0.8 A | ||
| (peak value); f > 1 MHz | ICM | max. | 2.5 A | ||
| D.C. power dissipation up to Tmb =50 °C | Ptot (d.c.) max. 12,5 W | ||||
| R.F. power dissipation | |||||
| f > 1 MHz; Tmb = 25 °C | Ptot (r.f.) | max. | 19 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLU99/SL Features
* multi-base structure and diffused emitter-ballasting resistors for an optimum temperature profile;
* gold metallization ensures excellent reliability.
* gold metallization ensures excellent reliability.
BLU99/SL Connection Diagram
BLV10 General Description
N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLV10 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCBSM | max. | 36v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 18v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current | |||||
| d.c. or average | IC(AV) | max. | 1.5 A | ||
| (peak value); f > 1 MHz | ICM | max. | 4.0 A | ||
| Total power dissipation | |||||
| f > 1 MHz; Tmb = 25 °C | Ptot (r.f.) | max. | 20 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLV10 Connection Diagram
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