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FQI4N60, FQI4N80, FQI4N90

Table of contents:
Info of FQI4N60
Info of FQI4N80
Info of FQI4N90

FQI4N60, FQI4N80, FQI4N90 Selling Leads, Datasheet

Package Cooled:TO-262 D/C:09+

FQI4N60, FQI4N80, FQI4N90 Datasheet download

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Part Number: FQI4N60

MFG: --

Package Cooled: TO-262

D/C: 09+

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FQI4N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQI4N60 Maximum Ratings

Symbol	Parameter	FQB4N60 / FQI4N60	Units
VDSS	Drain-Source Voltage	600	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	4.4	A
ID		2.8	A
IDM	Drain Current - Pulsed (Note 1)	17.6	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	260	mJ
IAR	Avalanche Current (Note 1)	4.4	A
EAR	Repetitive Avalanche Energy (Note 1)	10.6	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
PD	Power Dissipation (TA = 25°C) *	3.13	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	106	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	0.6	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQI4N60 Features

• 4.4A, 600V, RDS(on) = 2.2Ω @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 8.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQI4N80 General Description

FQI4N80 Maximum Ratings

Symbol	Parameter	FQB4N80 / FQI4N80	Units
VDSS	Drain-Source Voltage	800	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	3.9	A
ID		2.47	A
IDM	Drain Current - Pulsed (Note 1)	15.6	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	460	mJ
IAR	Avalanche Current (Note 1)	3.9	A
EAR	Repetitive Avalanche Energy (Note 1)	13	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
PD	Power Dissipation (TA = 25°C) *	3.13	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	130	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	1.04	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQI4N80 Features

• 3.9A, 800V, RDS(on) = 3.6Ω @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 8.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQI4N90 General Description

FQI4N90 Maximum Ratings

Symbol	Parameter	FQB4N90 / FQI4N90	Units
VDSS	Drain-Source Voltage	900	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	4.2	A
ID		2.65	A
IDM	Drain Current - Pulsed (Note 1)	16.8	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	570	mJ
IAR	Avalanche Current (Note 1)	4.2	A
EAR	Repetitive Avalanche Energy (Note 1)	14	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
PD	Power Dissipation (TA = 25°C) *	3.13	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	140	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	1.12	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQI4N90 Features

• 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V
• Low gate charge ( typically 24 nC)
• Low Crss ( typically 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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