FQI6N40C, FQI6N45, FQI6N50 Selling Leads, Datasheet
Package Cooled:TO-262 D/C:TO
FQI6N40C, FQI6N45, FQI6N50 Datasheet download
Part Number: FQI6N40C
MFG: --
Package Cooled: TO-262
D/C: TO
FQI6N40C, FQI6N45, FQI6N50
- Table of contents:
Info of FQI6N40C
Info of FQI6N45
Info of FQI6N50
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About FQI6N40C
PDF/DataSheet Download
Datasheet: FQI6N40C
File Size: 679067 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI6N45
PDF/DataSheet Download
Datasheet: FQI6N45
File Size: 596092 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI6N50
PDF/DataSheet Download
Datasheet: FQI6N50
File Size: 780361 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI6N40C General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
FQI6N40C Maximum Ratings
| Symbol | Parameter |
FQB6N40C/FQI6N40C |
Units |
| VDSS | Drain-Source Voltage |
400 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
6 |
A |
|
3.6 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
24 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
270 |
mJ |
| IAR | Avalanche Current (Note 1) |
6 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
7.3 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
73 |
W |
|
0.58 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI6N40C Features
• 6A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQI6N45 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.
FQI6N45 Maximum Ratings
| Symbol | Parameter |
FQB6N45 / FQI6N45 |
Units |
| VDSS | Drain-Source Voltage |
450 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
6.2 |
A |
|
3.9 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
25 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
350 |
mJ |
| IAR | Avalanche Current (Note 1) |
6.2 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
9.8 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
98 |
W | |
|
0.78 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI6N45 Features
• 6.2A, 450V, RDS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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