FQI9P25, FQL0008B, FQL01120B4M Selling Leads, Datasheet
Package Cooled:TO-262 D/C:TO
FQI9P25, FQL0008B, FQL01120B4M Datasheet download
Part Number: FQI9P25
MFG: --
Package Cooled: TO-262
D/C: TO
Package Cooled:TO-262 D/C:TO
FQI9P25, FQL0008B, FQL01120B4M Datasheet download
MFG: --
Package Cooled: TO-262
D/C: TO
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PDF/DataSheet Download
Datasheet: FQI9P25
File Size: 587743 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQL40N50
File Size: 638386 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQL40N50
File Size: 638386 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters.
Symbol | Parameter |
FQB9P25 / FQI9P25 |
Units |
VDSS | Drain-Source Voltage |
-250 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-9.4 |
A |
-5.9 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
-37.6 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
650 |
mJ |
IAR | Avalanche Current (Note 1) |
-9.4 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
12 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-5.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
120 |
W | |
0.96 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |