STW046, STW10NA50, STW10NB60 Selling Leads, Datasheet
MFG:N/A Package Cooled:97+ D/C:394
STW046, STW10NA50, STW10NB60 Datasheet download
Part Number: STW046
MFG: N/A
Package Cooled: 97+
D/C: 394
MFG:N/A Package Cooled:97+ D/C:394
STW046, STW10NA50, STW10NB60 Datasheet download
MFG: N/A
Package Cooled: 97+
D/C: 394
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PDF/DataSheet Download
Datasheet: STW10NA50
File Size: 248884 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STW10NA50
File Size: 248884 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STW10NB60
File Size: 96193 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
Symbol |
Parameter |
Value |
Unit | |
STW/STH10NA50 |
STH10NA50FI | |||
VDS |
Drain-source Voltage (VGS = 0) |
500 |
V | |
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
500 |
V | |
VGS |
Gate- source Voltage |
±30 |
V | |
ID |
Drain Current (continuos) at TC = 25°C |
9.6 |
5.6 |
A |
ID |
Drain Current (continuos) at TC = 100°C |
6.1 |
3.5 |
A |
IDM () |
Drain Current (pulsed) | 38 |
38 |
A |
PTOT |
Total Dissipation at TC = 25°C |
150 |
60 |
W |
Derating Factor |
1.2 |
0.48 |
W/°C | |
VISO |
Insulation Withstand Voltage (DC) |
- |
4000 |
V |
Tstg |
Storage Temperature |
65 to 150 |
°C | |
Tj |
Max. Operating Junction Temperature |
150 |
°C |
Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Symbol | Parameter | Value | Unit |
VDS |
Drain-source Voltage (VGS = 0) |
600 | V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
600 | V |
VGS |
Gate-source Voltage |
±30 | V |
ID |
Drain Current (continuous) at Tc = 25 |
10 | A |
ID |
Drain Current (continuous) at Tc = 100 |
6.2 | A |
IDM(•) |
Drain Current (pulsed) |
40 | A |
PTOT |
Total Dissipation at Tc = 25 |
160 | W |
Derating Factor |
1.28 | W/ | |
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
Tstg |
Storage Temperature |
-65 to 150 | |
Tj |
Max. Operating Junction Temperature |
150 |