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STW13NK100Z, STW13NK60Z, STW13NK80Z

Table of contents:
Info of STW13NK100Z
Info of STW13NK60Z
Info of STW13NK80Z

STW13NK100Z, STW13NK60Z, STW13NK80Z Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:TO

STW13NK100Z, STW13NK60Z, STW13NK80Z Datasheet download

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Part Number: STW13NK100Z

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO-247

D/C: TO

Description: MOSFET N-CH 800V 12A TO-247

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STW13NK100Z Parameters

Technical/Catalog Information	STW13NK100Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	700 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds	6000pF @ 25V
Power - Max	350W
Packaging	Tube
Gate Charge (Qg) @ Vgs	266nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW13NK100Z STW13NK100Z 497 3556 5 ND 49735565ND 497-3556-5

STW13NK100Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STW13NK100Z Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	1000	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	1000	V
V_GS	Gate-source Voltage	±30	V
I_D	Drain Current (continuous) at T_c= 25	13	A
I_D	Drain Current (continuous) at T_c = 100	8.2	A
I_DM(•)	Drain Current (pulsed)	52	A
P_TOT	Total Dissipation at T_c = 25	350	W
	Derating Factor	2.7	W/
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KΩ)	6000	V
dv/dt(1)	Peak Diode Recovery voltage slope	4	V/ns
T_j T_stg	Operating Junction Temperature Storage Temperature	-55 to 150

STW13NK100Z Features

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.

STW13NK100Z Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES

STW13NK60Z Parameters

Technical/Catalog Information	STW13NK60Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	550 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	2030pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	92nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW13NK60Z STW13NK60Z 497 3257 5 ND 49732575ND 497-3257-5

STW13NK60Z General Description

STW13NK60Z Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	STP13NK60Z STB13NK60Z/-1 STW13NK60Z	STP13NK60ZFP	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600		V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	600		V
V_GS	Gate- source Voltage	± 30		V
I_D	Drain Current (continuos) at T_C = 25	13	13(^*)	A
I_D	Drain Current (continuos) at T_C = 100	8.0	8.2(^*)	A
I_DM()	Drain Current (pulsed)	52	52(^*)	A
P_tot	Total Dissipation at T_C = 25	1.20	35	W
	Derating Factor	2.08	0.27	W/
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	4000		V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5		V/ns
V_ISO	Insulation Withstand Voltage (DC)	-	2500	V
T_j T_stg	Operating Junction Temperature Storage Temperature	55 to 150

() Pulse width limited by safe operating area
(1) I_SD 13 A, di/dt 200A/s, V_DD V_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed

STW13NK60Z Features

` TYPICAL R_DS(on) = 0.48
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY

STW13NK60Z Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC
· LIGHTING

STW13NK80Z Parameters

Technical/Catalog Information	STW13NK80Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	650 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	3480pF @ 25V
Power - Max	230W
Packaging	Tube
Gate Charge (Qg) @ Vgs	155nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW13NK80Z STW13NK80Z

STW13NK80Z General Description

STW13NK80Z Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	800	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	800	V
V_GS	Gate-source Voltage	±30	V
I_D	Drain Current (continuous) at T_c= 25	12	A
I_D	Drain Current (continuous) at T_c = 100	7.6	A
I_DM(.)	Drain Current (pulsed)	48	A
P_TOT	Total Dissipation at T_c = 25	230	W
	Derating Factor	1.85	W/
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	6000	V
dv/dt(1)	Peak Diode Recovery voltage slope	4.5	V/ns
T_j T_stg	Operating Junction Temperature Storage Temperature	-55 to 150

(•)Pulse width limited by safe operating area
(1)I_SD 12A, di/dt 200A/µs, V_DD V_(BR)DSS, Tj T_JMAX.
(*)Limited only by maximum temperature allowed

STW13NK80Z Features

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.

STW13NK80Z Typical Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·IDEAL FOR OFF-LINE POWER SUPPLIES

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