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STW12NM60N, STW13009, STW13NK50Z

Table of contents:
Info of STW12NM60N
Info of STW13009
Info of STW13NK50Z

STW12NM60N, STW13009, STW13NK50Z Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:06+07+pb-free

STW12NM60N, STW13009, STW13NK50Z Datasheet download

Five Points

Part Number: STW12NM60N

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO-247

D/C: 06+07+pb-free

Description: MOSFET N-CH 500V 11A TO-247

Price Break

1
10
100
250
500
1000
2500

Unit Price

4.35000
4.05000
3.15000
2.55000
2.17500
2.02500
1.92000

Extended Price

4.35
40.50
315.00
637.50
1087.50
2025.00
4800.00

(All prices are in USD) Prices for reference only

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STW12NM60N Parameters

Technical/Catalog Information	STW12NM60N
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	410 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	960pF @ 50V
Power - Max	90W
Packaging	Tube
Gate Charge (Qg) @ Vgs	30.5nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW12NM60N STW12NM60N 497 7615 5 ND 49776155ND 497-7615-5

STW12NM60N General Description

This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

STW12NM60N Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	D²PAK/I²PAK TO-220/TO-247	TO-220FP	Unit
V_DS	Drain-source voltage (V_GS=0)	600		V
V_GS	Gate-source voltage	± 25		V
I_D	Drain current (continuous) at T_C = 25	10	10⁽¹⁾	A
I_D	Drain current (continuous) at T_C = 100	6.3	6.3⁽¹⁾	A
I_DM⁽²⁾	Drain current (pulsed)	40	40⁽¹⁾	A
P_TOT	Total dissipation at T_C= 25	90	25	A
dv/dt⁽³⁾	Peak diode recovery voltage slope	15		V/ns
V_ISO	Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;T_C=25)	--	2500	V
T_j,T_stg	Operating junction temperature Storage temperature	-55 to 150

1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD 10A, di/dt 400A/s, V_DD =80% V_(BR)DSS

STW12NM60N Features

· 100% avalanche tested
· Low input capacitance and gate charge
· Low gate input resistance

STW12NM60N Typical Application

· Switching application

STW13009 Parameters

Technical/Catalog Information	STW13009
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	12A
Power - Max	125W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 8A, 5V
Vce Saturation (Max) @ Ib, Ic	900mV @ 1A, 5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STW13009 STW13009 497 3555 ND 4973555ND 497-3555

STW13NK50Z Parameters

Technical/Catalog Information	STW13NK50Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	480 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds	1600pF @ 25V
Power - Max	140W
Packaging	Tube
Gate Charge (Qg) @ Vgs	47nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW13NK50Z STW13NK50Z 497 7616 5 ND 49776165ND 497-7616-5

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