MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 247 D/C:08+/09+
STW11NK100Z, STW11NK90Z, STW11NM80 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO 247
D/C: 08+/09+
Description: MOSFET N-CH 800V 11A TO-247
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Datasheet: STW11NK100Z
File Size: 308299 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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Datasheet: STW10NA50
File Size: 248884 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STW11NM80
File Size: 390159 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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| Technical/Catalog Information | STW11NK100Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 8.3A |
| Rds On (Max) @ Id, Vgs | 1.38 Ohm @ 4.15A, 10V |
| Input Capacitance (Ciss) @ Vds | 3500pF @ 25V |
| Power - Max | 230W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 162nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW11NK100Z STW11NK100Z 497 3255 5 ND 49732555ND 497-3255-5 |
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
1000 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
1000 | V |
| VGS |
Gate-source Voltage |
±30 | V |
| ID |
Drain Current (continuous) at TC = 25 |
8.3 | A |
| ID |
Drain Current (continuous) at TC= 100 |
5.2 | A |
| IDM(•) |
Drain Current (pulsed) |
33.2 | A |
| PTOT |
Total Dissipation at TC= 25 |
230 | W |
|
Derating Factor |
1.85 | W/ | |
| VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KΩ) |
6000 | V |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
| Tj Tstg |
Operating Junction Temperature |
-55 to 150 |
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
| Technical/Catalog Information | STW11NM80 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1630pF @ 25V |
| Power - Max | 150W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 43.6nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW11NM80 STW11NM80 497 4420 5 ND 49744205ND 497-4420-5 |
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
| Symbol | Parameter |
Value |
Unit | |
| TO-220/D2PAK TO-247 |
TO-220FP | |||
| VDS | Drain-source Voltage (VGS = 0) |
800 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
800 |
V | |
| VGS | Gate- source Voltage |
±30 |
V | |
| ID | Drain Current (continuos) at TC = 25 |
11 |
11(*) |
A |
| ID | Drain Current (continuos) at TC = 100 |
4.7 |
4.7(*) |
A |
| IDM() | Drain Current (pulsed) |
44 |
44(*) |
A |
| PTOT | Total Dissipation at TC = 25 |
150 |
35 |
W |
| Derating Factor |
1.2 |
0.28 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
15 |
V/ns | |
| Tstg | Storage Temperature |
65 to 150 |
||
| Tj | Max. Operating Junction Temperature | |||
The 800 V MDmesh™ family is very suitable for single switch applications in particular for Flyback and Forward converter topologies.
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