MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 247 D/C:06+07+pb-free
STW12NK95Z, STW130NS04ZB, STW13NB60 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO 247
D/C: 06+07+pb-free
Description: MOSFET N-CH 600V 13A TO-247
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PDF/DataSheet Download
Datasheet: STW10NA50
File Size: 248884 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STW130NS04ZB
File Size: 335543 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STW13NB60
File Size: 114231 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STW12NK95Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 950V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Rds On (Max) @ Id, Vgs | 900 mOhm @ 5A, 10V |
| Input Capacitance (Ciss) @ Vds | 3500pF @ 25V |
| Power - Max | 230W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 113nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW12NK95Z STW12NK95Z 497 5167 5 ND 49751675ND 497-5167-5 |
This fully clamped MOSFET is produced by using the latest advanced Company's Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment .Any other application requiring extra ruggedness is also recommended.
| Symbol | Parameter |
Value |
Unit |
| VDS | Drain-source Voltage (VGS = 0) |
CLAMPED |
V |
| VDGR | Drain-gate Voltage |
CLAMPED |
V |
| VGS | Gate- source Voltage |
CLAMPED |
V |
| ID | Drain Current (continuos) at TC = 25 |
80 |
A |
| ID | Drain Current (continuos) at TC = 100 |
60 |
A |
| IDG | Drain Gate Current (continuous) |
50 |
mA |
| IGS | Gate Source Current (continuous) |
50 |
mA |
| IDM(`) | Drain Current (pulsed) |
320 |
A |
| PTOT | Total Dissipation at TC = 25 |
300 |
W |
| Derating Factor |
2.0 |
W/ | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
4 |
kV |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
55 to 175 |
| Technical/Catalog Information | STW13NB60 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 13A |
| Rds On (Max) @ Id, Vgs | 540 mOhm @ 6.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2600pF @ 25V |
| Power - Max | 190W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 82nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STW13NB60 STW13NB60 497 2772 5 ND 49727725ND 497-2772-5 |
Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
|
Symbol |
Parameter |
Value |
Unit | |
|
STW13NB60 |
STH13NB60FP | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
600 |
V | |
|
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
600 |
V | |
|
VGS |
Gate- source Voltage |
±30 |
V | |
|
ID |
Drain Current (continuos) at TC = 25°C |
13 |
8.6 |
A |
|
ID |
Drain Current (continuos) at TC = 100°C |
8.2 |
5.4 |
A |
|
IDM () |
Drain Current (pulsed) |
52 |
52 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
190 |
80 |
W |
| Derating Factor |
1.52 |
0.64 |
W/°C | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4 |
4 |
V/ns |
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2000 |
V |
|
Tstg |
Storage Temperature |
65 to 150 |
°C | |
|
Tj |
Max. Operating Junction Temperature |
150 |
°C | |
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