STW17N62K3, STW18NB40, STW18NB40F Selling Leads, Datasheet
MFG:ST Package Cooled:09+ D/C:03+
STW17N62K3, STW18NB40, STW18NB40F Datasheet download
Part Number: STW17N62K3
MFG: ST
Package Cooled: 09+
D/C: 03+
STW17N62K3, STW18NB40, STW18NB40F
- Table of contents:
Info of STW17N62K3
Info of STW18NB40
Info of STW18NB40F
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About STW10NA50
PDF/DataSheet Download
Datasheet: STW10NA50
File Size: 248884 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About STW18NB40
PDF/DataSheet Download
Datasheet: STW18NB40
File Size: 145670 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About STW18NB40FI
PDF/DataSheet Download
Datasheet: STW18NB40FI
File Size: 106608 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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STW18NB40 General Description
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETswithoutstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STW18NB40 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
|
STW18NB40 |
STH18NB40FI | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
400 |
V | |
|
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
400 |
V | |
|
VGS |
Gate- source Voltage |
±30 |
V | |
|
ID |
Drain Current (continuos) at TC = 25°C |
18.4 |
12.4 |
A |
|
ID |
Drain Current (continuos) at TC = 100°C |
11.6 |
7.8 |
A |
|
IDM () |
Drain Current (pulsed) |
73.6 |
73.6 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
190 |
80 |
W |
| Derating Factor |
1.52 |
0.64 |
W/°C | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
4.5 |
V/ns |
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2000 |
V |
|
Tstg |
Storage Temperature |
65 to 150 |
°C | |
|
Tj |
Max. Operating Junction Temperature |
150 |
°C | |
STW18NB40 Typical Application
HIGH CURRENT, HIGH SPEED SWITCHING
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