MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:09+ D/C:TO
STW18NB40FI, STW18NB60, STW18NK60Z Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: 09+
D/C: TO
Description: MOSFET N-CH 600V 16A TO-247
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Datasheet: STW18NB40FI
File Size: 106608 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STW10NA50
File Size: 248884 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STW18NK60Z
File Size: 211137 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STW18NK60Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 360 mOhm @ 8A, 10V |
| Input Capacitance (Ciss) @ Vds | 3540pF @ 25V |
| Power - Max | 230W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 170nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW18NK60Z STW18NK60Z 497 4422 5 ND 49744225ND 497-4422-5 |
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
600 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
600 | V |
| VGS |
Gate-source Voltage |
±30 | V |
| ID |
Drain Current (continuous) at Tc = 25 |
16 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
10 | A |
| IDM(.) |
Drain Current (pulsed) |
64 | A |
| PTOT |
Total Dissipation at Tc = 25 |
230 | W |
|
Derating Factor |
1.85 | W/ | |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
6000 |
V |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
| Tj Tstg |
Operating Junction Temperature |
-55 to 150 |
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